中国物理B ›› 2011, Vol. 20 ›› Issue (3): 37103-037103.doi: 10.1088/1674-1056/20/3/037103

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Electronic properties and deep level transient spectroscopy of CdS/CdTe thin film solar cells

黎兵, 冯良桓, 王钊, 郑旭, 郑家贵, 蔡亚平, 张静全, 李卫, 武莉莉, 雷智, 曾广根   

  1. College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China
  • 收稿日期:2010-08-30 修回日期:2010-10-20 出版日期:2011-03-15 发布日期:2011-03-15

Electronic properties and deep level transient spectroscopy of CdS/CdTe thin film solar cells

Li Bing(黎兵),Feng Liang-Huan(冯良桓),Wang Zhao(王钊), Zheng Xu(郑旭), Zheng Jia-Gui(郑家贵), Cai Ya-Ping(蔡亚平), Zhang Jing-Quan(张静全), Li Wei(李卫), Wu Li-Li(武莉莉), Lei Zhi(雷智), and Zeng Guang-Gen(曾广根)   

  1. College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China
  • Received:2010-08-30 Revised:2010-10-20 Online:2011-03-15 Published:2011-03-15

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摘要： It is well known that preparing temperatures and defects are highly related to deep-level impurities. In our studies, the CdTe polycrystalline films have been prepared at various temperatures by close spaced sublimation (CSS). The different preparing temperature effects on CdS/CdTe solar cells and deep-level impurities have been investigated by I--V and C--V measurements and deep level transient spectroscopy (DLTS). By comparison, less dark saturated current density, higher carrier concentration, and better photovoltaic performance are demonstrated in a 580oC sample. Also there is less deep-level impurity recombination, because the lower hole trap concentration is present in this sample. In addition, three deep levels, Ev+0.341 eV(H4), Ev+0.226 eV(H5) and EC-0.147 eV(E3), are found in the 580oC sample, and the possible source of deep levels is analysed and discussed.

关键词: CdTe, electrical properties, deep level transient spectroscopy

Abstract: It is well known that preparing temperatures and defects are highly related to deep-level impurities. In our studies, the CdTe polycrystalline films have been prepared at various temperatures by close spaced sublimation (CSS). The different preparing temperature effects on CdS/CdTe solar cells and deep-level impurities have been investigated by I–V and C–V measurements and deep level transient spectroscopy (DLTS). By comparison, less dark saturated current density, higher carrier concentration, and better photovoltaic performance are demonstrated in a 580℃ sample. Also there is less deep-level impurity recombination, because the lower hole trap concentration is present in this sample. In addition, three deep levels, Ev+0.341 eV(H4), Ev+0.226 eV(H5) and EC–0.147 eV(E3), are found in the 580℃ sample, and the possible source of deep levels is analysed and discussed.

Key words: CdTe, electrical properties, deep level transient spectroscopy

中图分类号:  (Impurity and defect levels)

  • 71.55.-i
72.80.Ey (III-V and II-VI semiconductors) 73.61.-r (Electrical properties of specific thin films)