中国物理B ›› 2011, Vol. 20 ›› Issue (3): 37103-037103.doi: 10.1088/1674-1056/20/3/037103
黎兵, 冯良桓, 王钊, 郑旭, 郑家贵, 蔡亚平, 张静全, 李卫, 武莉莉, 雷智, 曾广根
Li Bing(黎兵),Feng Liang-Huan(冯良桓),Wang Zhao(王钊), Zheng Xu(郑旭), Zheng Jia-Gui(郑家贵), Cai Ya-Ping(蔡亚平), Zhang Jing-Quan(张静全), Li Wei(李卫), Wu Li-Li(武莉莉), Lei Zhi(雷智), and Zeng Guang-Gen(曾广根)
摘要: It is well known that preparing temperatures and defects are highly related to deep-level impurities. In our studies, the CdTe polycrystalline films have been prepared at various temperatures by close spaced sublimation (CSS). The different preparing temperature effects on CdS/CdTe solar cells and deep-level impurities have been investigated by I--V and C--V measurements and deep level transient spectroscopy (DLTS). By comparison, less dark saturated current density, higher carrier concentration, and better photovoltaic performance are demonstrated in a 580oC sample. Also there is less deep-level impurity recombination, because the lower hole trap concentration is present in this sample. In addition, three deep levels, Ev+0.341 eV(H4), Ev+0.226 eV(H5) and EC-0.147 eV(E3), are found in the 580oC sample, and the possible source of deep levels is analysed and discussed.
中图分类号: (Impurity and defect levels)