Recombination-induced voltage-dependent photocurrent collection loss in CdTe thin film solar cell

doi:10.1088/1674-1056/ac728e

中国物理B ›› 2022, Vol. 31 ›› Issue (10): 108803-108803.doi: 10.1088/1674-1056/ac728e

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇

Recombination-induced voltage-dependent photocurrent collection loss in CdTe thin film solar cell

Ling-Ling Wu(吴玲玲), Guang-Wei Wang(王光伟), Juan Tian(田涓), Dong-Ming Wang(王东明), and De-Liang Wang(王德亮)^†

Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China

收稿日期:2022-02-23 修回日期:2022-05-18 出版日期:2022-10-16 发布日期:2022-09-27
通讯作者: De-Liang Wang E-mail:eedewang@ustc.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61774140 and 61474103).

Recombination-induced voltage-dependent photocurrent collection loss in CdTe thin film solar cell

Ling-Ling Wu(吴玲玲), Guang-Wei Wang(王光伟), Juan Tian(田涓), Dong-Ming Wang(王东明), and De-Liang Wang(王德亮)^†

Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China

Received:2022-02-23 Revised:2022-05-18 Online:2022-10-16 Published:2022-09-27
Contact: De-Liang Wang E-mail:eedewang@ustc.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61774140 and 61474103).

摘要/Abstract

摘要： Recently, the efficiency of CdTe thin film solar cell has been improved by using new type of window layer Mg_xZn_1-xO (MZO). However, it is hard to achieve such a high efficiency as expected. In this report a comparative study is carried out between the MZO/CdTe and CdS/CdTe solar cells to investigate the factors affecting the device performance of MZO/CdTe solar cells. The efficiency loss quantified by voltage-dependent photocurrent collection efficiency (η_C(V')) is 3.89% for MZO/CdTe and 1.53% for CdS/CdTe solar cells. The higher efficiency loss for the MZO/CdTe solar cell is induced by more severe carrier recombination at the MZO/CdTe p—n junction interface and in CdTe bulk region than that for the CdS/CdTe solar cell. Activation energy (E_a) of the reverse saturation current of the MZO/CdTe and CdS/CdTe solar cells are found to be 1.08 eV and 1.36 eV, respectively. These values indicate that for the CdS/CdTe solar cell the carrier recombination is dominated by bulk Shockley—Read—Hall (SRH) recombination and for the MZO/CdTe solar cell the carrier recombination is dominated by the p—n junction interface recombination. It is found that the tunneling-enhanced interface recombination is also involved in carrier recombination in the MZO/CdTe solar cell. This work demonstrates the poor device performance of the MZO/CdTe solar cell is induced by more severe interface and bulk recombination than that of the CdS/CdTe solar cell.

关键词: CdTe solar cell, voltage-dependent photocurrent collection efficiency, interface recombination, bulk recombination

Abstract: Recently, the efficiency of CdTe thin film solar cell has been improved by using new type of window layer Mg_xZn_1-xO (MZO). However, it is hard to achieve such a high efficiency as expected. In this report a comparative study is carried out between the MZO/CdTe and CdS/CdTe solar cells to investigate the factors affecting the device performance of MZO/CdTe solar cells. The efficiency loss quantified by voltage-dependent photocurrent collection efficiency (η_C(V')) is 3.89% for MZO/CdTe and 1.53% for CdS/CdTe solar cells. The higher efficiency loss for the MZO/CdTe solar cell is induced by more severe carrier recombination at the MZO/CdTe p—n junction interface and in CdTe bulk region than that for the CdS/CdTe solar cell. Activation energy (E_a) of the reverse saturation current of the MZO/CdTe and CdS/CdTe solar cells are found to be 1.08 eV and 1.36 eV, respectively. These values indicate that for the CdS/CdTe solar cell the carrier recombination is dominated by bulk Shockley—Read—Hall (SRH) recombination and for the MZO/CdTe solar cell the carrier recombination is dominated by the p—n junction interface recombination. It is found that the tunneling-enhanced interface recombination is also involved in carrier recombination in the MZO/CdTe solar cell. This work demonstrates the poor device performance of the MZO/CdTe solar cell is induced by more severe interface and bulk recombination than that of the CdS/CdTe solar cell.

Key words: CdTe solar cell, voltage-dependent photocurrent collection efficiency, interface recombination, bulk recombination

中图分类号: (Thin film III-V and II-VI based solar cells)

88.40.jm

88.40.hj (Efficiency and performance of solar cells) 73.50.Gr (Charge carriers: generation, recombination, lifetime, trapping, mean free paths) 88.40.H- (Solar cells (photovoltaics))

Ling-Ling Wu(吴玲玲), Guang-Wei Wang(王光伟), Juan Tian(田涓), Dong-Ming Wang(王东明), and De-Liang Wang(王德亮). Recombination-induced voltage-dependent photocurrent collection loss in CdTe thin film solar cell[J]. 中国物理B, 2022, 31(10): 108803-108803.

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Recombination-induced voltage-dependent photocurrent collection loss in CdTe thin film solar cell

Recombination-induced voltage-dependent photocurrent collection loss in CdTe thin film solar cell

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