Optical characterization of defects in narrow-gap HgCdTe for infrared detector applications

doi:10.1088/1674-1056/28/1/017104

中国物理B ›› 2019, Vol. 28 ›› Issue (1): 17104-017104.doi: 10.1088/1674-1056/28/1/017104

所属专题： TOPICAL REVIEW — Photodetector: Materials, physics, and applications

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇下一篇

Optical characterization of defects in narrow-gap HgCdTe for infrared detector applications

Fang-Yu Yue(越方禹), Su-Yu Ma(马骕驭), Jin Hong(洪进), Ping-Xiong Yang(杨平雄), Cheng-Bin Jing(敬承斌), Ye Chen(陈晔), Jun-Hao Chu(褚君浩)

1 Key Laboratory of Polar Materials and Devices(MOE), Department of Optoelectronics, School of Information Science Technology, East China Normal University, Shanghai 200241, China;
2 National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

收稿日期:2018-10-17 修回日期:2018-11-14 出版日期:2019-01-05 发布日期:2019-01-05
通讯作者: Fang-Yu Yue E-mail:fyyue@ee.ecnu.edu.cn
基金资助:
Project supported by the Major Program of the National Natural Science Foundation of China (Grant Nos. 61790583, 61874043, 61874045, and 61775060) and the National Key Research and Development Program, China (Grant No. 2016YFB0501604).

Optical characterization of defects in narrow-gap HgCdTe for infrared detector applications

Fang-Yu Yue(越方禹)¹, Su-Yu Ma(马骕驭)¹, Jin Hong(洪进)¹, Ping-Xiong Yang(杨平雄)¹, Cheng-Bin Jing(敬承斌)¹, Ye Chen(陈晔)¹, Jun-Hao Chu(褚君浩)^1,2

1 Key Laboratory of Polar Materials and Devices(MOE), Department of Optoelectronics, School of Information Science Technology, East China Normal University, Shanghai 200241, China;
2 National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

Received:2018-10-17 Revised:2018-11-14 Online:2019-01-05 Published:2019-01-05
Contact: Fang-Yu Yue E-mail:fyyue@ee.ecnu.edu.cn
Supported by:
Project supported by the Major Program of the National Natural Science Foundation of China (Grant Nos. 61790583, 61874043, 61874045, and 61775060) and the National Key Research and Development Program, China (Grant No. 2016YFB0501604).

摘要/Abstract

摘要： Narrow-gap Hg_1-xCd_xTe material with a composition x of about 0.3 plays an extremely important role in mid-infrared detection applications. In this work, the optical properties of doped HgCdTe with x≈ 0.3 are reviewed, including the defects and defect levels of intrinsic V_Hg and the extrinsic amphoteric arsenic (As) dopants, which can act as shallow/deep donors and acceptors. The influence of the defects on the determination of band-edge electronic structure is discussed when absorption or photoluminescence spectra are considered. The inconsistency between these two optical techniques is demonstrated and analyzed by taking into account the Fermi level position as a function of composition, doping level, conductivity type, and temperature. The defect level and its evolution, especially in As-doped HgCdTe, are presented. Our results provide a systematic understanding of the mechanisms and help for optimizing annealing conditions towards p-type As-activation, and eventually for fabricating high performance mid-infrared detectors.

关键词: HgCdTe, defects, annealing procedures, optical characterization

Abstract: Narrow-gap Hg_1-xCd_xTe material with a composition x of about 0.3 plays an extremely important role in mid-infrared detection applications. In this work, the optical properties of doped HgCdTe with x≈ 0.3 are reviewed, including the defects and defect levels of intrinsic V_Hg and the extrinsic amphoteric arsenic (As) dopants, which can act as shallow/deep donors and acceptors. The influence of the defects on the determination of band-edge electronic structure is discussed when absorption or photoluminescence spectra are considered. The inconsistency between these two optical techniques is demonstrated and analyzed by taking into account the Fermi level position as a function of composition, doping level, conductivity type, and temperature. The defect level and its evolution, especially in As-doped HgCdTe, are presented. Our results provide a systematic understanding of the mechanisms and help for optimizing annealing conditions towards p-type As-activation, and eventually for fabricating high performance mid-infrared detectors.

Key words: HgCdTe, defects, annealing procedures, optical characterization

中图分类号: (Impurity and defect levels)

71.55.-i

71.55.Gs (II-VI semiconductors) 78.55.-m (Photoluminescence, properties and materials) 61.72.Cc (Kinetics of defect formation and annealing)

越方禹, 马骕驭, 洪进, 杨平雄, 敬承斌, 陈晔, 褚君浩. Optical characterization of defects in narrow-gap HgCdTe for infrared detector applications[J]. 中国物理B, 2019, 28(1): 17104-017104.

Fang-Yu Yue(越方禹), Su-Yu Ma(马骕驭), Jin Hong(洪进), Ping-Xiong Yang(杨平雄), Cheng-Bin Jing(敬承斌), Ye Chen(陈晔), Jun-Hao Chu(褚君浩). Optical characterization of defects in narrow-gap HgCdTe for infrared detector applications[J]. Chin. Phys. B, 2019, 28(1): 17104-017104.

参考文献 40

[1]	Martyniuk P, Antoszewski J, Martyniuk M, Faraone L and Rogalski A 2014 Appl. Phys. Rev. 1 041102 doi: 10.1063/1.4896193
[2]	Lei W, Antoszewski J and Faraone L 2015 Appl. Phys. Rev. 2 041303 doi: 10.1063/1.4936577
[3]	Li Q, He J L, Hu W D, Chen L, Chen X S and Lu W 2018 IEEE T. Electron. Dev. 65 572 doi: 10.1109/TED.2017.2783352
[4]	Tomm J W 1994 Curr. Top. Cryst. Growth Res. 1 245
[5]	Berding M A, Sher A, Schilfgaarde M V, Chen A C and Arias J 1998 J. Electron. Mater. 27 605 doi: 10.1007/s11664-998-0023-5
[6]	Hu W D, Liang J, Yue F Y, Chen X S and Lu W 2016 J. Infrared Millim. Waves 35 25
[7]	Wu J, Xu F F, Wu Y, Chen L, Yu M F and He L 2005 J. Infrared Millim. Waves 24 81
[8]	Duan H, Chen X S, Huang Y and Lu W 2007 Solid State Commun. 143 471 doi: 10.1016/j.ssc.2007.06.032
[9]	Yue F Y, Chu J H, Wu J, Hu Z G, Li Y W and Yang P X 2008 Appl. Phys. Lett. 92 121916 doi: 10.1063/1.2903499
[10]	Shao J, Yue F Y, Lü X, Lu W, Huang W, Li Z F, Guo S L and Chu J H 2006 Appl. Phys. Lett. 89 182121 doi: 10.1063/1.2378675
[11]	Yue F Y, Wu J and Chu J H 2008 Appl. Phys. Lett. 93 131909 doi: 10.1063/1.2983655
[12]	Chu J H, Mi Z Y and Tang D Y 1991 Infrared Phys. 32 195 doi: 10.1016/0020-0891(91)90110-2
[13]	Chu J H, Xu S C and Tang D Y 1983 Appl. Phys. Lett. 43 1064; Chu J H, Sher A 2007 Springer-Verlag
[14]	Hansen G L, Schmidt J L and Casselman T N 1982 J. Appl. Phys. 53 7099 doi: 10.1063/1.330018
[15]	Shao J, Lu W, Lv X, Yue F Y, Li Z F, Guo S L and Chu J H 2006 Rev. Sci. Instrum. 77 063104 doi: 10.1063/1.2205622
[16]	Cui H Y, Zeng J D, Tang N Y and Tang Z 2013 Opt. Quant. Electron. 45 629 doi: 10.1007/s11082-012-9632-6
[17]	Qiu W, Hu W D, Chen L, Lin C, Cheng X, Chen X S and Lu W 2015 IEEE T. Electron. Dev. 62 1926 doi: 10.1109/TED.2015.2417193
[18]	Sun L Z, Chen X S, Sun Y L, Zhou X H, Quan Z J, Duan H and Lu W 2005 Phys. Rev. B 71 192303
[19]	Yue F Y, Chen L, Li Y W, Sun L, Yang P X and Chu J H 2012 Chin. Phys. B 21 017804 doi: 10.1088/1674-1056/21/1/017804
[20]	Yue F Y, Shao J, Lü X, Huang W, Chu J H, Wu J, Lin X C and He L 2006 Appl. Phys. Lett. 89 021912 doi: 10.1063/1.2221411
[21]	Yue F Y, Shao J, Wei Y F, Lv X, Huang W, Yang J R and Chu J H 2007 Acta Phys. Sin. 56 2878 (in Chinese)
[22]	Chu J H, Mi Z Y and Tang D Y 1992 J. Appl. Phys. 71 3955 doi: 10.1063/1.350867
[23]	Chu J H, Li B, Liu K and Tang D Y 1994 J. Appl. Phys. 75 1234 doi: 10.1063/1.356464
[24]	Yue F Y, Chen L, Li Y W, Hu Z G, Sun L, Yang P X and Chu J H 2010 Chin. Phys. B 19 117106 doi: 10.1088/1674-1056/19/11/117106
[25]	Yue F Y, Chen L, Wu J, Hu Z G, Li Y W, Yang P X and Chu J H 2009 Chin. Phys. Lett. 26 047804 doi: 10.1088/0256-307X/26/4/047804
[26]	Hu W D, Chen X S, Ye Z H, Chen Y G, Yin F, Zhang B and Lu W 2012 Appl. Phys. Lett. 101 181108 doi: 10.1063/1.4764903
[27]	Hu W D, Ye Z H, Liao L, Chen H L, Chen L, Ding R J, He L, Chen X S and Lu W 2014 Opt. Lett. 39 5184 doi: 10.1364/OL.39.005184
[28]	Li Y T, Hu W D, Ye Z H, Chen Y Y, Chen X S and Lu W 2017 Opt. Lett. 42 1325 doi: 10.1364/OL.42.001325
[29]	Hu W D, Chen X S, Ye Z H, Feng A L, Yin F, Zhang B, Liao L and Lu W 2013 IEEE J. Sel. Top. Quant. Electron. 19 4100107
[30]	Boieriu P, Chen Y and Nathan V 2002 J. Electron. Mater. 31 694 doi: 10.1007/s11664-002-0221-5
[31]	Berding M A, van Schilfgaarde M and Sher A 1994 Phys. Rev. B 50 1519 doi: 10.1103/PhysRevB.50.1519
[32]	Sun L Z, Chen X S, Zhao J J, Wang J B, Zhou Y C and Lu W 2007 Phys. Rev. B 76 045219 doi: 10.1103/PhysRevB.76.045219
[33]	Vydyanath H R and Hiner C H 1989 J. Appl. Phys. 65 3080 doi: 10.1063/1.342703
[34]	Edwall D, Piquette E, Ellsworth J, Arias J, Swartz C H, Bai L, Tompkins R P, Giles N C, Myers T H and Berding M 2004 J. Electron. Mater. 33 752 doi: 10.1007/s11664-004-0077-y
[35]	Shi X H, Rujirawat S, Ashokan R, Grein C H and Sivananthan S 1998 Appl. Phys. Lett. 73 638 doi: 10.1063/1.121932
[36]	Wang H, Hong J, Yue F Y, Jing C B and Chu J H 2017 Infrared Phys. Techn. 82 1 doi: 10.1016/j.infrared.2017.02.007
[37]	Shao J, Lu W, Yue F Y, Lv X, Huang W, Li Z F, Guo S L and Chu J H 2007 Rev. Sci. Instrum. 78 013111 doi: 10.1063/1.2432269
[38]	Selamet Y, Grein C H, Lee T S and Sivananthan S 2001 J. Vac. Sci. Technol. B 19 1488 doi: 10.1116/1.1374628
[39]	Kenworthy I, Capper P, Jones C L, Gosney J J G and Coates W G 1990 Semicond. Sci. Technol. 5 854 doi: 10.1088/0268-1242/5/8/009
[40]	Grein C H, Garl, J W, Sivananthan S, Wijewarnasuriya P S, Aqariden F and Fuchs M 1999 J. Electron. Mater. 28 789 doi: 10.1007/s11664-999-0071-5

Optical characterization of defects in narrow-gap HgCdTe for infrared detector applications

Optical characterization of defects in narrow-gap HgCdTe for infrared detector applications

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