[1] |
Liping Zhang(张丽萍), Zuyu Xu(徐祖雨), Xiaojie Li(黎晓杰), Xu Zhang(张旭), Mingyang Qin(秦明阳), Ruozhou Zhang(张若舟), Juan Xu(徐娟), Wenxin Cheng(程文欣), Jie Yuan(袁洁), Huabing Wang(王华兵), Alejandro V. Silhanek, Beiyi Zhu(朱北沂), Jun Miao(苗君), and Kui Jin(金魁). Cascade excitation of vortex motion and reentrant superconductivity in flexible Nb thin films[J]. 中国物理B, 2023, 32(4): 47302-047302. |
[2] |
Li-Xin Gao(高礼鑫), Xiao-Ke Zhang(张晓珂), An-Lei Zhang(张安蕾), Qi-Ling Xiao(肖祁陵), Fei Chen(陈飞), and Jun-Yi Ge(葛军饴). Flux pinning evolution in multilayer Pb/Ge/Pb/Ge/Pb superconducting systems[J]. 中国物理B, 2023, 32(3): 37402-037402. |
[3] |
Xin-Li Liu(刘欣丽), Yue-Fei Weng(翁月飞), Ning Mao(毛宁), Pei-Qing Zhang(张培晴), Chang-Gui Lin(林常规), Xiang Shen(沈祥), Shi-Xun Dai(戴世勋), and Bao-An Song(宋宝安). Effect of thickness of antimony selenide film on its photoelectric properties and microstructure[J]. 中国物理B, 2023, 32(2): 27802-027802. |
[4] |
Yao-Pu Lang(郎垚璞), Qing-Gang Liu(刘庆纲), Qi Wang(王奇), Xing-Lin Zhou(周兴林), and Guang-Yi Jia(贾光一). Method of measuring one-dimensional photonic crystal period-structure-film thickness based on Bloch surface wave enhanced Goos-Hänchen shift[J]. 中国物理B, 2023, 32(1): 17802-017802. |
[5] |
Jian-Ke Yao(姚建可) and Wen-Sen Zhong(钟文森). Optical and electrical properties of BaSnO3 and In2O3 mixed transparent conductive films deposited by filtered cathodic vacuum arc technique at room temperature[J]. 中国物理B, 2023, 32(1): 18101-018101. |
[6] |
Wen Xiong(熊文), Jing-Yong Huo(霍景永), Xiao-Han Wu(吴小晗), Wen-Jun Liu(刘文军),David Wei Zhang(张卫), and Shi-Jin Ding(丁士进). High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO2 heterojunction charge trapping stack[J]. 中国物理B, 2023, 32(1): 18503-018503. |
[7] |
Ming Xu(徐明), Tao Yang(杨涛), Wenxue Yu(于文学), Ning Yang(杨宁), Cuixiu Liu(刘翠秀), Zhenhong Mai(麦振洪), Wuyan Lai(赖武彦), and Kun Tao(陶琨). Erratum to “Accurate determination of film thickness by low-angle x-ray reflection”[J]. 中国物理B, 2022, 31(9): 99901-099901. |
[8] |
Qiong Wu(吴琼), Lei Zhao(赵雷), Xinghao Chen(陈兴豪), and Shifeng Zhao(赵世峰)†. Efficiently enhanced energy storage performance of Ba2Bi4Ti5O18 film by co-doping Fe3+ and Ta5+ ion with larger radius[J]. 中国物理B, 2022, 31(9): 97701-097701. |
[9] |
Chen Wang(王琛), Wenmo Lu(路文墨), Fengnan Li(李奉南), Qiaomei Luo(罗巧梅), and Fei Ma(马飞)†. Migration of weakly bonded oxygen atoms in a-IGZO thin films and the positive shift of threshold voltage in TFTs[J]. 中国物理B, 2022, 31(9): 96101-096101. |
[10] |
Tianyuan Song(宋天源), Dongli Zhang(张冬利), Mingxiang Wang(王明湘), and Qi Shan(单奇). Degradation mechanisms for a-InGaZnO thin-film transistors functioning under simultaneous DC gate and drain biases[J]. 中国物理B, 2022, 31(8): 88101-088101. |
[11] |
Yilin Li(李屹林), Hui Zhu(朱慧), Rui Li(李锐), Jie Liu(柳杰), Jinjuan Xiang(项金娟), Na Xie(解娜), Zeng Huang(黄增), Zhixuan Fang(方志轩), Xing Liu(刘行), and Lixing Zhou(周丽星). Wake-up effect in Hf0.4Zr0.6O2 ferroelectric thin-film capacitors under a cycling electric field[J]. 中国物理B, 2022, 31(8): 88502-088502. |
[12] |
Noor Wali Khan, Arshad Khan, Muhammad Usman, Taza Gul, Abir Mouldi, and Ameni Brahmia. Influences of Marangoni convection and variable magnetic field on hybrid nanofluid thin-film flow past a stretching surface[J]. 中国物理B, 2022, 31(6): 64403-064403. |
[13] |
Min Huang(黄敏), Yan-Song Liu(刘艳松), Zhi-Bing He(何智兵), and Yong Yi(易勇). Structure, phase evolution and properties of Ta films deposited using hybrid high-power pulsed and DC magnetron co-sputtering[J]. 中国物理B, 2022, 31(6): 66101-066101. |
[14] |
Lu-Lu Pei(裴露露), Peng-Fei Ju(鞠鹏飞), Li Ji(吉利), Hong-Xuan Li(李红轩),Xiao-Hong Liu(刘晓红), Hui-Di Zhou(周惠娣), and Jian-Min Chen(陈建敏). Vacuum current-carrying tribological behavior of MoS2-Ti films with different conductivities[J]. 中国物理B, 2022, 31(6): 66201-066201. |
[15] |
Quan-Yuan Zeng(曾全元), Xiao-Hua Zhang(张小华), and Dao-Bin Ji(纪道斌). Numerical simulation of two droplets impacting upon a dynamic liquid film[J]. 中国物理B, 2022, 31(4): 46801-046801. |