中国物理B ›› 2022, Vol. 31 ›› Issue (6): 66101-066101.doi: 10.1088/1674-1056/ac43a9

• • 上一篇    下一篇

Structure, phase evolution and properties of Ta films deposited using hybrid high-power pulsed and DC magnetron co-sputtering

Min Huang(黄敏)1, Yan-Song Liu(刘艳松)1,†, Zhi-Bing He(何智兵)1, and Yong Yi(易勇)2   

  1. 1 Laser Fusion Research Center, China Academy of Engineering Physics, Mianyang 621900, China;
    2 School of Materials Science and Engineering, Southwest University of Science and Technology, Mianyang 621010, China
  • 收稿日期:2021-02-04 修回日期:2021-12-12 接受日期:2021-12-16 出版日期:2022-05-17 发布日期:2022-05-17
  • 通讯作者: Yan-Song Liu E-mail:jdliuyansong@163.com
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 51401194).

Structure, phase evolution and properties of Ta films deposited using hybrid high-power pulsed and DC magnetron co-sputtering

Min Huang(黄敏)1, Yan-Song Liu(刘艳松)1,†, Zhi-Bing He(何智兵)1, and Yong Yi(易勇)2   

  1. 1 Laser Fusion Research Center, China Academy of Engineering Physics, Mianyang 621900, China;
    2 School of Materials Science and Engineering, Southwest University of Science and Technology, Mianyang 621010, China
  • Received:2021-02-04 Revised:2021-12-12 Accepted:2021-12-16 Online:2022-05-17 Published:2022-05-17
  • Contact: Yan-Song Liu E-mail:jdliuyansong@163.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 51401194).

RichHTML

0

PDF (PC)

70

赞

摘要： Crystalline phase and microstructure control are critical for obtaining desired properties of Ta films deposited by magnetron sputtering. Structure, phase evolution and properties of Ta films deposited by using hybrid high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS) under different fractions of DCMS power were investigated, where Ta ion to Ta neutral ratios of the deposition flux were changed. The results revealed that the number of Ta ions arriving on the substrate/growing film plays an important role in structure and phase evolution of Ta films. It can effectively avoid the unstable arc discharge under low pressure and show a higher deposition rate by combining HiPIMS and DCMS compared with only HiPIMS. Meanwhile, the high hardness α -Ta films can be directly deposited by hybrid co-sputtering compared to those prepared by DCMS. In the co-sputtering technology, pure α -Ta phase films with extremely fine, dense and uniform crystal grains were obtained, which showed smooth surface roughness (3.22 nm), low resistivity (38.98 μΩ · cm) and abnormal high hardness (17.64 GPa).

关键词: hybrid sputtering, tantalum thin film, structure, hardness

Abstract: Crystalline phase and microstructure control are critical for obtaining desired properties of Ta films deposited by magnetron sputtering. Structure, phase evolution and properties of Ta films deposited by using hybrid high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS) under different fractions of DCMS power were investigated, where Ta ion to Ta neutral ratios of the deposition flux were changed. The results revealed that the number of Ta ions arriving on the substrate/growing film plays an important role in structure and phase evolution of Ta films. It can effectively avoid the unstable arc discharge under low pressure and show a higher deposition rate by combining HiPIMS and DCMS compared with only HiPIMS. Meanwhile, the high hardness α -Ta films can be directly deposited by hybrid co-sputtering compared to those prepared by DCMS. In the co-sputtering technology, pure α -Ta phase films with extremely fine, dense and uniform crystal grains were obtained, which showed smooth surface roughness (3.22 nm), low resistivity (38.98 μΩ · cm) and abnormal high hardness (17.64 GPa).

Key words: hybrid sputtering, tantalum thin film, structure, hardness

中图分类号:  (Techniques for structure determination)

  • 61.05.-a
68.37.-d (Microscopy of surfaces, interfaces, and thin films) 81.70.Bt (Mechanical testing, impact tests, static and dynamic loads) 52.65.Ww (Hybrid methods)