中国物理B ›› 2023, Vol. 32 ›› Issue (2): 27802-027802.doi: 10.1088/1674-1056/ac8724

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Effect of thickness of antimony selenide film on its photoelectric properties and microstructure

Xin-Li Liu(刘欣丽)1,3,5, Yue-Fei Weng(翁月飞)1,3,5, Ning Mao(毛宁)1,3,5, Pei-Qing Zhang(张培晴)2,3,5, Chang-Gui Lin(林常规)2,3,5, Xiang Shen(沈祥)1,3,4,5, Shi-Xun Dai(戴世勋)2,3,5, and Bao-An Song(宋宝安)1,3,5,†   

  1. 1 Faculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, China;
    2 The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China;
    3 Key Laboratory of Photoelectric Detecting Materials and Devices of Zhejiang Province, Ningbo 315211, China;
    4 Ningbo Institute of Oceanography, Ningbo University, Ningbo 315211, China;
    5 Engineering Research Center for Advanced Infrared Photoelectric Materials and Devices of Zhejiang Province, Ningbo 315211, China
  • 收稿日期:2022-04-19 修回日期:2022-07-15 接受日期:2022-08-05 出版日期:2023-01-10 发布日期:2023-01-31
  • 通讯作者: Bao-An Song E-mail:songbaoan@nbu.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 62075109, 62135011, 62075107, and 61935006) and K. C. Wong Magna Fund in Ningbo University.

Effect of thickness of antimony selenide film on its photoelectric properties and microstructure

Xin-Li Liu(刘欣丽)1,3,5, Yue-Fei Weng(翁月飞)1,3,5, Ning Mao(毛宁)1,3,5, Pei-Qing Zhang(张培晴)2,3,5, Chang-Gui Lin(林常规)2,3,5, Xiang Shen(沈祥)1,3,4,5, Shi-Xun Dai(戴世勋)2,3,5, and Bao-An Song(宋宝安)1,3,5,†   

  1. 1 Faculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, China;
    2 The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China;
    3 Key Laboratory of Photoelectric Detecting Materials and Devices of Zhejiang Province, Ningbo 315211, China;
    4 Ningbo Institute of Oceanography, Ningbo University, Ningbo 315211, China;
    5 Engineering Research Center for Advanced Infrared Photoelectric Materials and Devices of Zhejiang Province, Ningbo 315211, China
  • Received:2022-04-19 Revised:2022-07-15 Accepted:2022-08-05 Online:2023-01-10 Published:2023-01-31
  • Contact: Bao-An Song E-mail:songbaoan@nbu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 62075109, 62135011, 62075107, and 61935006) and K. C. Wong Magna Fund in Ningbo University.

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摘要： Antimony selenide (Sb2Se3) films are widely used in phase change memory and solar cells due to their stable switching effect and excellent photovoltaic properties. These properties of the films are affected by the film thickness. A method combining the advantages of Levenberg-Marquardt method and spectral fitting method (LM-SFM) is presented to study the dependence of refractive index (RI), absorption coefficient, optical band gap, Wemple-DiDomenico parameters, dielectric constant and optical electronegativity of the Sb2Se3 films on their thickness. The results show that the RI and absorption coefficient of the Sb2Se3 films increase with the increase of film thickness, while the optical band gap decreases with the increase of film thickness. Finally, the reasons why the optical and electrical properties of the film change with its thickness are explained by x-ray diffractometer (XRD), energy dispersive x-ray spectrometer (EDS), Mott-Davis state density model and Raman microstructure analysis.

关键词: antimony selenide films, photoelectric properties, Levenberg-Marquardt method and spectral fitting method (LM-SFM), microstructure

Abstract: Antimony selenide (Sb2Se3) films are widely used in phase change memory and solar cells due to their stable switching effect and excellent photovoltaic properties. These properties of the films are affected by the film thickness. A method combining the advantages of Levenberg-Marquardt method and spectral fitting method (LM-SFM) is presented to study the dependence of refractive index (RI), absorption coefficient, optical band gap, Wemple-DiDomenico parameters, dielectric constant and optical electronegativity of the Sb2Se3 films on their thickness. The results show that the RI and absorption coefficient of the Sb2Se3 films increase with the increase of film thickness, while the optical band gap decreases with the increase of film thickness. Finally, the reasons why the optical and electrical properties of the film change with its thickness are explained by x-ray diffractometer (XRD), energy dispersive x-ray spectrometer (EDS), Mott-Davis state density model and Raman microstructure analysis.

Key words: antimony selenide films, photoelectric properties, Levenberg-Marquardt method and spectral fitting method (LM-SFM), microstructure

中图分类号:  (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))

  • 78.20.Ci
78.20.-e (Optical properties of bulk materials and thin films) 78.20.Bh (Theory, models, and numerical simulation)