中国物理B ›› 2011, Vol. 20 ›› Issue (2): 27305-027305.doi: 10.1088/1674-1056/20/2/027305

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Erratum to "Quantum compact model for thin-body double-gate Schottky barrier MOSFETs"

栾苏珍, 刘红侠   

  1. School of Microelectronics, Xidian University, Xi'an 710071, China; Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China
  • 出版日期:2011-02-15 发布日期:2011-02-15

Erratum to "Quantum compact model for thin-body double-gate Schottky barrier MOSFETs"

Luan Su-Zhen(栾苏珍)a)b) and Liu Hong-Xia(刘红侠)a)b)    

  1. a School of Microelectronics, Xidian University, Xi'an 710071, China; b Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China
  • Online:2011-02-15 Published:2011-02-15

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关键词: Schottky barrier, quantum mechanism effect, effective mass, electron density

Key words: Schottky barrier, quantum mechanism effect, effective mass, electron density

中图分类号:  (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

  • 73.40.Qv
73.30.+y (Surface double layers, Schottky barriers, and work functions) 73.40.Gk (Tunneling) 85.30.Tv (Field effect devices)