Photoreflectance system based on vacuum ultraviolet laser at 177.3 nm

doi:10.1088/1674-1056/ac89e4

中国物理B ›› 2022, Vol. 31 ›› Issue (11): 110701-110701.doi: 10.1088/1674-1056/ac89e4

Photoreflectance system based on vacuum ultraviolet laser at 177.3 nm

Wei-Xia Luo(罗伟霞)^1,2, Xue-Lu Liu(刘雪璐)^1,†, Xiang-Dong Luo(罗向东)³, Feng Yang(杨峰)^4,5, Shen-Jin Zhang(张申金)^4,5, Qin-Jun Peng(彭钦军)^4,5, Zu-Yan Xu(许祖彦)^4,5, and Ping-Heng Tan(谭平恒)^1,2,‡

1 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences(CAS), Beijing 100083, China;
2 Center of Materials Science and Optoelectronics Engineering&CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Jiangsu Key Laboratory of ASIC, Nantong University, Nantong 226019, China;
4 Key Laboratory of Solid State Laser, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China;
5 Key Laboratory of Function Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China

收稿日期:2022-05-30 修回日期:2022-07-29 接受日期:2022-08-16 出版日期:2022-10-17 发布日期:2022-10-21
通讯作者: Xue-Lu Liu, Ping-Heng Tan E-mail:liuxuelu@semi.ac.cn;phtan@semi.ac.cn
基金资助:
Project supported by the National Development Project for Major Scientific Research Facility of China (Grant No. ZDYZ2012-2), the National Natural Science Foundation of China (Grant No. 11874350), and CAS Key Research Program of Frontier Sciences (Grant Nos. ZDBS-LY-SLH004 and XDPB22).

Photoreflectance system based on vacuum ultraviolet laser at 177.3 nm

1 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences(CAS), Beijing 100083, China;
2 Center of Materials Science and Optoelectronics Engineering&CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Jiangsu Key Laboratory of ASIC, Nantong University, Nantong 226019, China;
4 Key Laboratory of Solid State Laser, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China;
5 Key Laboratory of Function Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China

Received:2022-05-30 Revised:2022-07-29 Accepted:2022-08-16 Online:2022-10-17 Published:2022-10-21
Contact: Xue-Lu Liu, Ping-Heng Tan E-mail:liuxuelu@semi.ac.cn;phtan@semi.ac.cn
Supported by:
Project supported by the National Development Project for Major Scientific Research Facility of China (Grant No. ZDYZ2012-2), the National Natural Science Foundation of China (Grant No. 11874350), and CAS Key Research Program of Frontier Sciences (Grant Nos. ZDBS-LY-SLH004 and XDPB22).

摘要/Abstract

摘要： Photoreflectance (PR) spectroscopy is a powerful and non-destructive experimental technique to explore interband transitions of semiconductors. In most PR systems, the photon energy of the pumping beam is usually chosen to be higher than the bandgap energy of the sample. To the best of our knowledge, the highest energy of pumping laser in reported PR systems is 5.08 eV (244 nm), not yet in the vacuum ultraviolet (VUV) region. In this work, we report the design and construction of a PR system pumped by VUV laser of 7.0 eV (177.3 nm). At the same time, dual-modulated technique is applied and a dual channel lock-in-amplifier is integrated into the system for efficient PR measurement. The system's performance is verified by the PR spectroscopy measurement of well-studied semiconductors, which testifies its ability to probe critical-point energies of the electronic band in semiconductors from ultraviolet to near-infrared spectral region.

关键词: photoreflectance spectroscopy, vacuum ultraviolet laser, electronic band structure, critical points of electron density of states

Abstract: Photoreflectance (PR) spectroscopy is a powerful and non-destructive experimental technique to explore interband transitions of semiconductors. In most PR systems, the photon energy of the pumping beam is usually chosen to be higher than the bandgap energy of the sample. To the best of our knowledge, the highest energy of pumping laser in reported PR systems is 5.08 eV (244 nm), not yet in the vacuum ultraviolet (VUV) region. In this work, we report the design and construction of a PR system pumped by VUV laser of 7.0 eV (177.3 nm). At the same time, dual-modulated technique is applied and a dual channel lock-in-amplifier is integrated into the system for efficient PR measurement. The system's performance is verified by the PR spectroscopy measurement of well-studied semiconductors, which testifies its ability to probe critical-point energies of the electronic band in semiconductors from ultraviolet to near-infrared spectral region.

Key words: photoreflectance spectroscopy, vacuum ultraviolet laser, electronic band structure, critical points of electron density of states

中图分类号: (Optical instruments and equipment)

07.60.-j

78.40.-q (Absorption and reflection spectra: visible and ultraviolet) 71.20.-b (Electron density of states and band structure of crystalline solids) 78.20.-e (Optical properties of bulk materials and thin films)

Wei-Xia Luo(罗伟霞), Xue-Lu Liu(刘雪璐), Xiang-Dong Luo(罗向东), Feng Yang(杨峰), Shen-Jin Zhang(张申金), Qin-Jun Peng(彭钦军), Zu-Yan Xu(许祖彦), and Ping-Heng Tan(谭平恒). Photoreflectance system based on vacuum ultraviolet laser at 177.3 nm[J]. 中国物理B, 2022, 31(11): 110701-110701.

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Photoreflectance system based on vacuum ultraviolet laser at 177.3 nm

Photoreflectance system based on vacuum ultraviolet laser at 177.3 nm

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