中国物理B ›› 2011, Vol. 20 ›› Issue (10): 104209-104209.doi: 10.1088/1674-1056/20/10/104209

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Broadband non-polarizing beam splitter based on guided mode resonance effect

许程1, 强颖怀1, 朱亚波1, 麻健勇2   

  1. (1)School of Materials Science and Engineering, China University of Mining and Technology, Xuzhou 221116, China; (2)Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 收稿日期:2010-12-11 修回日期:2011-05-03 出版日期:2011-10-15 发布日期:2011-10-15
  • 基金资助:
    Project supported by the Youth Science Research Foundation of China University of Mining and Technology (Grant No. 2009A058) and the Natural Science Foundation of Shanghai Committee of Science and Technology (Grant No. 10ZR1433500).

Broadband non-polarizing beam splitter based on guided mode resonance effect

Ma Jian-Yong(麻健勇)a)†, Xu Cheng(许程) b), Qiang Ying-Huai(强颖怀)b), and Zhu Ya-Bo(朱亚波) b)   

  1. a Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China; b School of Materials Science and Engineering, China University of Mining and Technology, Xuzhou 221116, China
  • Received:2010-12-11 Revised:2011-05-03 Online:2011-10-15 Published:2011-10-15
  • Supported by:
    Project supported by the Youth Science Research Foundation of China University of Mining and Technology (Grant No. 2009A058) and the Natural Science Foundation of Shanghai Committee of Science and Technology (Grant No. 10ZR1433500).

摘要: A broadband non-polarizing beam splitter (NPBS) operating in the telecommunication C+L band is designed by using the guided mode resonance effect of periodic silicon-on-insulator (SOI) elements. It is shown that this double layer SOI structure can provide ~50/50 beam ratio with the maximum divergences between reflection and transmission being less than 8% over the spectrum of 1.4 μm~1.7 μm and 1% in the telecommunication band for both TE and TM polarizations. The physical basis of this broadband non-polarizing property is on the simultaneous excitation of the TE and TM strong modulation waveguide modes near the designed spectrum band. Meanwhile, the electric field distributions for both TE and TM polarizations verify the resonant origin of spectrum in the periodic SOI structure. Furthermore, it is demonstrated with our calculations that the beam splitter proposed here is tolerant to the deviations of incident angle and structure parameters, which make it very easy to be fabricated with current IC technology.

关键词: non-polarizing beam splitter, guided mode resonance, silicon-on-insulator, rigorous coupled-wave analysis

Abstract: A broadband non-polarizing beam splitter (NPBS) operating in the telecommunication C+L band is designed by using the guided mode resonance effect of periodic silicon-on-insulator (SOI) elements. It is shown that this double layer SOI structure can provide ~50/50 beam ratio with the maximum divergences between reflection and transmission being less than 8% over the spectrum of 1.4 μm~1.7 μm and 1% in the telecommunication band for both TE and TM polarizations. The physical basis of this broadband non-polarizing property is on the simultaneous excitation of the TE and TM strong modulation waveguide modes near the designed spectrum band. Meanwhile, the electric field distributions for both TE and TM polarizations verify the resonant origin of spectrum in the periodic SOI structure. Furthermore, it is demonstrated with our calculations that the beam splitter proposed here is tolerant to the deviations of incident angle and structure parameters, which make it very easy to be fabricated with current IC technology.

Key words: non-polarizing beam splitter, guided mode resonance, silicon-on-insulator, rigorous coupled-wave analysis

中图分类号:  (Optical coatings)

  • 42.79.Wc