中国物理B ›› 2010, Vol. 19 ›› Issue (8): 87205-087205.doi: 10.1088/1674-1056/19/8/087205

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Study of depth-dependent tetragonal distortion of quaternary AlInGaN epilayer by Rutherford backscattering/channeling

G. Husnain, 陈田祥, 法涛, 姚淑德   

  1. State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 100871, China
  • 收稿日期:2009-08-07 修回日期:2009-10-13 出版日期:2010-08-15 发布日期:2010-08-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 10875004), and the National Basic Research Program of China (Grant No. 2010CB832904).

Study of depth-dependent tetragonal distortion of quaternary AlInGaN epilayer by Rutherford backscattering/channeling

G. Husnain†, Chen Tian-Xiang(陈田祥), Fa Tao(法涛), and Yao Shu-De(姚淑德)‡   

  1. State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 100871, China
  • Received:2009-08-07 Revised:2009-10-13 Online:2010-08-15 Published:2010-08-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 10875004), and the National Basic Research Program of China (Grant No. 2010CB832904).

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摘要： A 240-nm thick Al0.4In0.02Ga0.58N layer is grown by metal organic chemical vapour deposition, with an over 1-μ m thick GaN layer used as a buffer layer on a substrate of sapphire (0001). Rutherford backscattering and channeling are used to characterize the microstructure of AlInGaN. The results show a good crystalline quality of AlInGaN (χmin=1.5%) with GaN buffer layer. The channeling angular scan around an off-normal <12-13> axis in the {101-0} plane of the AlInGaN layer is used to determine tetragonal distortion eT, which is caused by the elastic strain in the AlInGaN. The resulting AlInGaN is subjected to an elastic strain at interfacial layer, and the strain decreases gradually towards the near-surface layer. It is expected that an epitaxial AlInGaN thin film with a thickness of 850 nm will be fully relaxed (eT = 0).

Abstract: A 240-nm thick Al0.4In0.02Ga0.58N layer is grown by metal organic chemical vapour deposition, with an over 1-μ m thick GaN layer used as a buffer layer on a substrate of sapphire (0001). Rutherford backscattering and channeling are used to characterize the microstructure of AlInGaN. The results show a good crystalline quality of AlInGaN ($\chi$min=1.5%) with GaN buffer layer. The channeling angular scan around an off-normal <1$\bar{2}$13> axis in the {10$\bar{1}$0} plane of the AlInGaN layer is used to determine tetragonal distortion eT, which is caused by the elastic strain in the AlInGaN. The resulting AlInGaN is subjected to an elastic strain at interfacial layer, and the strain decreases gradually towards the near-surface layer. It is expected that an epitaxial AlInGaN thin film with a thickness of 850 nm will be fully relaxed (eT = 0).

Key words: III–V semiconductors, Rutherford backscattering and channeling, tetragonal distortion

中图分类号:  (Thin film structure and morphology)

  • 68.55.-a
61.85.+p (Channeling phenomena (blocking, energy loss, etc.) ?) 62.20.D- (Elasticity) 68.60.Bs (Mechanical and acoustical properties) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 81.15.Kk (Vapor phase epitaxy; growth from vapor phase)