中国物理B ›› 2010, Vol. 19 ›› Issue (7): 77303-077303.doi: 10.1088/1674-1056/19/7/077303

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

AlGaN/GaN MIS-HEMT using NbAlO dielectric layer grown by atomic layer deposition

毕志伟1, 冯倩1, 郝跃1, 马晓华1, 张进成1, 全思1, 许晟瑞1, 王党会2   

  1. (1)Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, The School of Microelectronics, Xidian University, Xi'an 710071, China; (2)School of Materials Science and Engineering, Xi'an Shiyou University, Xi'an 710065, China
  • 修回日期:2010-01-16 出版日期:2010-07-15 发布日期:2010-07-15
  • 基金资助:
    Project supported by the State Key Program and Major Program of National Natural Science Foundation of China (Grant Nos. 60736033 and 60890191).

AlGaN/GaN MIS-HEMT using NbAlO dielectric layer grown by atomic layer deposition

Bi Zhi-Wei(毕志伟)a)†, Feng Qian(冯倩)a), Hao Yue(郝跃)a)‡ , Wang Dang-Hui(王党会)b), Ma Xiao-Hua(马晓华) a), Zhang Jin-Cheng(张进成)a), Quan Si(全思)a), and Xu Sheng-Rui(许晟瑞) a)   

  1. a Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, The School of Microelectronics, Xidian University, Xi'an 710071, China; b School of Materials Science and Engineering, Xi'an Shiyou University, Xi'an 710065, China
  • Revised:2010-01-16 Online:2010-07-15 Published:2010-07-15
  • Supported by:
    Project supported by the State Key Program and Major Program of National Natural Science Foundation of China (Grant Nos. 60736033 and 60890191).

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摘要： We present an AlGaN/GaN metal—insulator—semiconductor high electron mobility transistor (MIS-HEMT) with an NbAlO high-k dielectric deposited by atomic layer deposition (ALD). Surface morphology of samples are observed by atomic force microscopy (AFM), indicating that the ALD NbAlO has an excellent-property surface. Moreover, the sharp transition from depletion to accumulation in capacitance—voltage (C—V)curse of MIS-HEMT demonstrates the high quality bulk and interface properties of NbAlO on AlGaN. The fabricated MIS-HEMT with a gate length of 0.5 μ m exhibits a maximum drain current of 960 mA/mm, and the reverse gate leakage current is almost 3 orders of magnitude lower than that of reference HEMT. Based on the improved direct-current operation, the NbAlO can be considered to be a potential gate oxide comparable to other dielectric insulators.

Abstract: We present an AlGaN/GaN metal—insulator—semiconductor high electron mobility transistor (MIS-HEMT) with an NbAlO high-k dielectric deposited by atomic layer deposition (ALD). Surface morphology of samples are observed by atomic force microscopy (AFM), indicating that the ALD NbAlO has an excellent-property surface. Moreover, the sharp transition from depletion to accumulation in capacitance—voltage (C—V)curse of MIS-HEMT demonstrates the high quality bulk and interface properties of NbAlO on AlGaN. The fabricated MIS-HEMT with a gate length of 0.5 μ m exhibits a maximum drain current of 960 mA/mm, and the reverse gate leakage current is almost 3 orders of magnitude lower than that of reference HEMT. Based on the improved direct-current operation, the NbAlO can be considered to be a potential gate oxide comparable to other dielectric insulators.

Key words: AlGaN/GaN, MIS-HEMT, NbAlO, high-k

中图分类号:  (Field effect devices)

  • 85.30.Tv
81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 68.35.B- (Structure of clean surfaces (and surface reconstruction)) 68.37.Ps (Atomic force microscopy (AFM))