中国物理B ›› 2010, Vol. 19 ›› Issue (7): 77304-077304.doi: 10.1088/1674-1056/19/7/077304

• • 上一篇    下一篇

InP-based InGaAs/InAlGaAs digital alloy quantum well laser structure at 2 μm

顾溢, 王凯, 李耀耀, 李成, 张永刚   

  1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
  • 出版日期:2010-07-15 发布日期:2010-07-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 60876034) and the National Basic Research Program of China (Grant No. 2006CB604903).

InP-based InGaAs/InAlGaAs digital alloy quantum well laser structure at 2 μm

Gu Yi(顾溢), Wang Kai(王凯), Li Yao-Yao(李耀耀), Li Cheng(李成), and Zhang Yong-Gang(张永刚)†   

  1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
  • Online:2010-07-15 Published:2010-07-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 60876034) and the National Basic Research Program of China (Grant No. 2006CB604903).

PDF (PC)

902

赞

摘要： The structural and optical characteristics of InP-based compressively strained InGaAs quantum wells have been significantly improved by using gas source molecular beam epitaxy grown InAs/In0.53Ga0.47As digital alloy triangular well layers and tensile In0.53Ga0.47As/InAlGaAs digital alloy barrier layers. The x-ray diffraction and transmission electron microscope characterisations indicate that the digital alloy structures present favourable lattice quality. Photoluminescence (PL) and electroluminescence (EL) measurements show that the use of digital alloy barriers offers better optical characteristics than that of conventional random alloy barriers. A significantly improved PL signal of around 2.1 μ m at 300 K and an EL signal of around 1.95 μ m at 100 K have been obtained.

Abstract: The structural and optical characteristics of InP-based compressively strained InGaAs quantum wells have been significantly improved by using gas source molecular beam epitaxy grown InAs/In0.53Ga0.47As digital alloy triangular well layers and tensile In0.53Ga0.47As/InAlGaAs digital alloy barrier layers. The x-ray diffraction and transmission electron microscope characterisations indicate that the digital alloy structures present favourable lattice quality. Photoluminescence (PL) and electroluminescence (EL) measurements show that the use of digital alloy barriers offers better optical characteristics than that of conventional random alloy barriers. A significantly improved PL signal of around 2.1 μ m at 300 K and an EL signal of around 1.95 μ m at 100 K have been obtained.

Key words: InP-based, digital alloy, lasers, strained materials

中图分类号:  (Semiconductor lasers; laser diodes)

  • 42.55.Px
78.67.De (Quantum wells) 81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy) 68.55.-a (Thin film structure and morphology) 78.55.Cr (III-V semiconductors) 78.60.Fi (Electroluminescence)