中国物理B ›› 2010, Vol. 19 ›› Issue (4): 47201-047201.doi: 10.1088/1674-1056/19/4/047201

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Influence of geometrical parameters on the behaviour of SiC merged PiN Schottky rectifiers with junction termination extension

宋庆文, 张玉明, 张义门, 张倩, 郭辉, 李志云, 王中旭   

  1. School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
  • 收稿日期:2009-06-17 修回日期:2009-07-24 出版日期:2010-04-15 发布日期:2010-04-15
  • 基金资助:
    Project supported by Shaanxi 13115 Innovation Engineering Foundation (Grant No.~2008ZDKG-30) and Pre-research Project (Grant No.~51308040302).

Influence of geometrical parameters on the behaviour of SiC merged PiN Schottky rectifiers with junction termination extension

Song Qing-Wen(宋庆文)†, Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Zhang Qian(张倩), Guo Hui(郭辉), Li Zhi-Yun(李志云), and Wang Zhong-Xu(王中旭)   

  1. School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
  • Received:2009-06-17 Revised:2009-07-24 Online:2010-04-15 Published:2010-04-15
  • Supported by:
    Project supported by Shaanxi 13115 Innovation Engineering Foundation (Grant No.~2008ZDKG-30) and Pre-research Project (Grant No.~51308040302).

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摘要： This paper investigates the behaviours of 4H--SiC merged PiN Schottky (MPS) rectifiers with junction termination extension (JTE) by extensive numerical simulations. The simulated results show that the present model matches the experimental data very well. The influences of the JTE design parameters such as the doping concentration and length of the JTE on the breakdown characteristics are discussed in detail. Then the temperature sensitivity of the forward behaviour is studied in terms of the different designs of 4H--SiC MPS with JTE, which provides a particularly useful guideline for the optimal design of MPS rectifiers with JTE.

Abstract: This paper investigates the behaviours of 4H--SiC merged PiN Schottky (MPS) rectifiers with junction termination extension (JTE) by extensive numerical simulations. The simulated results show that the present model matches the experimental data very well. The influences of the JTE design parameters such as the doping concentration and length of the JTE on the breakdown characteristics are discussed in detail. Then the temperature sensitivity of the forward behaviour is studied in terms of the different designs of 4H--SiC MPS with JTE, which provides a particularly useful guideline for the optimal design of MPS rectifiers with JTE.

Key words: 4H--SiC, merged PiN Schottky rectifier, junction termination extension, breakdown, thermal behaviour

中图分类号:  (Junction diodes)

  • 85.30.Kk
84.70.+p (High-current and high-voltage technology: power systems; power transmission lines and cables) 85.40.Ry (Impurity doping, diffusion and ion implantation technology) 61.72.S- (Impurities in crystals) 85.30.De (Semiconductor-device characterization, design, and modeling)