Device research on GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistors grown by metal organic chemical vapour deposition

doi:10.1088/1674-1056/19/3/037302

中国物理B ›› 2010, Vol. 19 ›› Issue (3): 37302-037302.doi: 10.1088/1674-1056/19/3/037302

Device research on GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistors grown by metal organic chemical vapour deposition

徐静波, 张海英, 付晓君, 郭天义, 黄杰

Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

收稿日期:2009-05-25 修回日期:2009-06-09 出版日期:2010-03-15 发布日期:2010-03-15
基金资助:
Project supported by the State Key Development Program for Basic Research of China (Grant No.~G2002CB311901) and Institute of Microelectronics, Chinese Academy of Sciences, Dean Fund (Grant No.~06SB124004).

Device research on GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistors grown by metal organic chemical vapour deposition

Xu Jing-Bo(徐静波)^†, Zhang Hai-Ying(张海英), Fu Xiao-Jun(付晓君), Guo Tian-Yi(郭天义), and Huang Jie(黄杰)

Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Received:2009-05-25 Revised:2009-06-09 Online:2010-03-15 Published:2010-03-15
Supported by:
Project supported by the State Key Development Program for Basic Research of China (Grant No.~G2002CB311901) and Institute of Microelectronics, Chinese Academy of Sciences, Dean Fund (Grant No.~06SB124004).

摘要/Abstract

摘要： This paper applies a novel quad-layer resist and e-beam lithography technique to fabricate a GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistor (HEMT) grown by metal organic chemical vapour deposition (MOCVD). The gate length of the metamorphic HEMT was 150~nm, the maximum current density was 330~mA/mm, the maximum transconductance was 470~mS/mm, the threshold voltage was -0.6~V, and the maximum current gain cut-off frequency and maximum oscillation frequency were 102~GHz and 450~GHz, respectively. This is the first report on tri-termination devices whose frequency value is above 400~GHz in China. The excellent frequency performances promise the possibility of metamorphic HEMTs grown by MOCVD for millimetre-wave applications, and more outstanding device performances would be obtained after optimizing the material structure, the elaborate T-gate and other device processes further.

Abstract: This paper applies a novel quad-layer resist and e-beam lithography technique to fabricate a GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistor (HEMT) grown by metal organic chemical vapour deposition (MOCVD). The gate length of the metamorphic HEMT was 150 nm, the maximum current density was 330 mA/mm, the maximum transconductance was 470 mS/mm, the threshold voltage was -0.6 V, and the maximum current gain cut-off frequency and maximum oscillation frequency were 102 GHz and 450 GHz, respectively. This is the first report on tri-termination devices whose frequency value is above 400 GHz in China. The excellent frequency performances promise the possibility of metamorphic HEMTs grown by MOCVD for millimetre-wave applications, and more outstanding device performances would be obtained after optimizing the material structure, the elaborate T-gate and other device processes further.

Key words: GaAs-based metamorphic HEMT, maximum current gain cut-off frequency, maximum oscillation frequency, T-gate

中图分类号: (Field effect devices)

85.30.Tv

81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 85.40.Hp (Lithography, masks and pattern transfer) 84.40.-x (Radiowave and microwave (including millimeter wave) technology) 85.30.De (Semiconductor-device characterization, design, and modeling)

徐静波, 张海英, 付晓君, 郭天义, 黄杰. Device research on GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistors grown by metal organic chemical vapour deposition[J]. 中国物理B, 2010, 19(3): 37302-037302.

Xu Jing-Bo(徐静波), Zhang Hai-Ying(张海英), Fu Xiao-Jun(付晓君), Guo Tian-Yi(郭天义), and Huang Jie(黄杰). Device research on GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistors grown by metal organic chemical vapour deposition[J]. Chin. Phys. B, 2010, 19(3): 37302-037302.

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Device research on GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistors grown by metal organic chemical vapour deposition

Device research on GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistors grown by metal organic chemical vapour deposition

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