Spin-dependent transport for a two-dimensional electron gas with magnetic barriers

doi:10.1088/1674-1056/19/3/037301

中国物理B ›› 2010, Vol. 19 ›› Issue (3): 37301-037301.doi: 10.1088/1674-1056/19/3/037301

Spin-dependent transport for a two-dimensional electron gas with magnetic barriers

王海艳¹, 廖文虎¹, 周光辉¹, 段子刚²

(1)Department of Physics, Hunan Normal University, Changsha 410081, China; (2)Institute of Optoelectronics, Shenzhen University, Shenzhen 518060, China

收稿日期:2009-05-23 修回日期:2009-09-10 出版日期:2010-03-15 发布日期:2010-03-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos.~10574042 and 10974052), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No.~20060542002).

Spin-dependent transport for a two-dimensional electron gas with magnetic barriers

Wang Hai-Yan(王海艳)^a), Duan Zi-Gang(段子刚)^b), Liao Wen-Hu(廖文虎)^a), and Zhou Guang-Hui(周光辉)^a)†

^a Department of Physics, Hunan Normal University, Changsha 410081, China; ^b Institute of Optoelectronics, Shenzhen University, Shenzhen 518060, China

Received:2009-05-23 Revised:2009-09-10 Online:2010-03-15 Published:2010-03-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos.~10574042 and 10974052), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No.~20060542002).

摘要/Abstract

摘要： The spin-dependent conductance and magnetoresistance ratio (MRR) for a semiconductor heterostructures consisting of two magnetic barriers with different height and space have been investigated by the transfer-matrix method. It is shown that the splitting of the conductance for parallel and antiparallel magnetization configurations results in tremendous spin-dependent MRR, and the maximal MRRs reach 5300\% and 3800\% for the magnetic barrier spaces W=81.3 and 243.9~nm, respectively. The obtained spin-filtering transport property of nanostructures with magnetic barriers may be useful to magnetic-barrier-based spintronics.

Abstract: The spin-dependent conductance and magnetoresistance ratio (MRR) for a semiconductor heterostructures consisting of two magnetic barriers with different height and space have been investigated by the transfer-matrix method. It is shown that the splitting of the conductance for parallel and antiparallel magnetization configurations results in tremendous spin-dependent MRR, and the maximal MRRs reach 5300\% and 3800\% for the magnetic barrier spaces W = 81.3 and 243.9 nm, respectively. The obtained spin-filtering transport property of nanostructures with magnetic barriers may be useful to magnetic-barrier-based spintronics.

Key words: semiconductor 2DEG, magnetic barriers, spin-dependent transport

中图分类号: (Spin polarized transport in semiconductors)

72.25.Dc

72.25.Mk (Spin transport through interfaces) 75.60.Ej (Magnetization curves, hysteresis, Barkhausen and related effects) 72.20.My (Galvanomagnetic and other magnetotransport effects) 73.63.-b (Electronic transport in nanoscale materials and structures)

王海艳, 段子刚, 廖文虎, 周光辉. Spin-dependent transport for a two-dimensional electron gas with magnetic barriers[J]. 中国物理B, 2010, 19(3): 37301-037301.

Wang Hai-Yan(王海艳), Duan Zi-Gang(段子刚), Liao Wen-Hu(廖文虎), and Zhou Guang-Hui(周光辉). Spin-dependent transport for a two-dimensional electron gas with magnetic barriers[J]. Chin. Phys. B, 2010, 19(3): 37301-037301.

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Spin-dependent transport for a two-dimensional electron gas with magnetic barriers

Spin-dependent transport for a two-dimensional electron gas with magnetic barriers

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