Universal spin-dependent variable range hopping in wide-band-gap oxide ferromagnetic semiconductors

doi:10.1088/1674-1056/19/3/037203

中国物理B ›› 2010, Vol. 19 ›› Issue (3): 37203-037203.doi: 10.1088/1674-1056/19/3/037203

Universal spin-dependent variable range hopping in wide-band-gap oxide ferromagnetic semiconductors

代由勇, 颜世申, 田玉峰, 陈延学, 刘国磊, 梅良模

School of Physics, and National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

收稿日期:2009-05-05 修回日期:2009-07-04 出版日期:2010-03-15 发布日期:2010-03-15
基金资助:
Project supported by the National Basic Research Program of China (Grant Nos.~2007CB924903 and 2009CB929202), and the National Natural Science Foundation of China (Grant No.~10974120).

Universal spin-dependent variable range hopping in wide-band-gap oxide ferromagnetic semiconductors

Dai You-Yong(代由勇), Yan Shi-Shen(颜世申)^†,Tian Yu-Feng(田玉峰),Chen Yan-Xue(陈延学), Liu Guo-Lei(刘国磊), and Mei Liang-Mo(梅良模)

School of Physics, and National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

Received:2009-05-05 Revised:2009-07-04 Online:2010-03-15 Published:2010-03-15
Supported by:
Project supported by the National Basic Research Program of China (Grant Nos.~2007CB924903 and 2009CB929202), and the National Natural Science Foundation of China (Grant No.~10974120).

摘要/Abstract

摘要： This paper proposes a universal spin-dependent variable range hopping theoretical model to describe various experimental transport phenomena observed in wide-band-gap oxide ferromagnetic semiconductors with high transition metal concentration. The contributions of the `hard gap' energy, Coulomb interaction, correlation energy, and exchange interaction to the electrical transport are considered in the universal variable range hopping theoretical model. By fitting the temperature and magnetic field dependence of the experimental sheet resistance to the theoretical model, the spin polarization ratio of electrical carriers near the Fermi level and interactions between electrical carriers can be obtained.

Abstract: This paper proposes a universal spin-dependent variable range hopping theoretical model to describe various experimental transport phenomena observed in wide-band-gap oxide ferromagnetic semiconductors with high transition metal concentration. The contributions of the `hard gap' energy, Coulomb interaction, correlation energy, and exchange interaction to the electrical transport are considered in the universal variable range hopping theoretical model. By fitting the temperature and magnetic field dependence of the experimental sheet resistance to the theoretical model, the spin polarization ratio of electrical carriers near the Fermi level and interactions between electrical carriers can be obtained.

Key words: variable range hopping, ferromagnetic semiconductors, electrical transport, spin polarization

中图分类号: (Spin polarized transport in semiconductors)

72.25.Dc

75.50.Pp (Magnetic semiconductors) 75.50.Dd (Nonmetallic ferromagnetic materials) 75.30.Et (Exchange and superexchange interactions) 71.20.Nr (Semiconductor compounds) 72.20.Dp (General theory, scattering mechanisms)

代由勇, 颜世申, 田玉峰, 陈延学, 刘国磊, 梅良模. Universal spin-dependent variable range hopping in wide-band-gap oxide ferromagnetic semiconductors[J]. 中国物理B, 2010, 19(3): 37203-037203.

Dai You-Yong(代由勇), Yan Shi-Shen(颜世申),Tian Yu-Feng(田玉峰),Chen Yan-Xue(陈延学), Liu Guo-Lei(刘国磊), and Mei Liang-Mo(梅良模). Universal spin-dependent variable range hopping in wide-band-gap oxide ferromagnetic semiconductors[J]. Chin. Phys. B, 2010, 19(3): 37203-037203.

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Universal spin-dependent variable range hopping in wide-band-gap oxide ferromagnetic semiconductors

Universal spin-dependent variable range hopping in wide-band-gap oxide ferromagnetic semiconductors

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