Effects of switching pulse width and stress on properties of Bi3.25La0.75Ti3O12 thin films

doi:10.1088/1674-1056/19/3/036802

中国物理B ›› 2010, Vol. 19 ›› Issue (3): 36802-036802.doi: 10.1088/1674-1056/19/3/036802

Effects of switching pulse width and stress on properties of Bi_3.25La_0.75Ti₃O₁₂ thin films

吕笑梅¹, 刘云飞¹, 朱劲松¹, 吴秀梅², 陈华², 翟亚²

(1)National Laboratory of Solid State Microstructures, Physics Department, Nanjing University, Nanjing 210093, China; (2)Physics Department, Southeast University, Nanjing 211189, China

收稿日期:2009-06-03 修回日期:2009-07-28 出版日期:2010-03-15 发布日期:2010-03-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No.~50871029), the National Basic Research Program of China (Grant Nos.~2010CB923401 and 2009CB929501) and the Cyanine-Project Foundation of Jiangsu Province of China (Grant No.~1107020060).

Effects of switching pulse width and stress on properties of Bi_3.25La_0.75Ti₃O₁₂ thin films

Wu Xiu-Mei(吴秀梅)^a)†, Chen-Hua(陈华)^a), Zhai-Ya(翟亚)^a), Lu Xiao-Mei(吕笑梅)^b), Liu Yun-Fei(刘云飞)^b), and Zhu Jin-Song(朱劲松)^b)

^a Physics Department, Southeast University, Nanjing 211189, China; ^b National Laboratory of Solid State Microstructures, Physics Department, Nanjing University, Nanjing 210093, China

Received:2009-06-03 Revised:2009-07-28 Online:2010-03-15 Published:2010-03-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No.~50871029), the National Basic Research Program of China (Grant Nos.~2010CB923401 and 2009CB929501) and the Cyanine-Project Foundation of Jiangsu Province of China (Grant No.~1107020060).

摘要/Abstract

摘要： Polycrystalline ferroelectric Bi_3.25La_0.75Ti₃O₁₂ thin films are prepared on Pt/Ti/SiO₂/Si substrates by the conventional metalorganic decomposition method. It is observed that with the increase of switching pulse width, the remnant polarisation and the coercive field increase. A wider switching pulse can result in poorer fatigue properties, which comes from more charged defects diffusing to and being trapped on domain walls. On the other hand, when the compressive stress is applied to films, the fatigue properties can be improved. This phenomenon is due to the reorientation of domains under stress.

Abstract: Polycrystalline ferroelectric Bi_3.25La_0.75Ti₃O₁₂ thin films are prepared on Pt/Ti/SiO₂/Si substrates by the conventional metalorganic decomposition method. It is observed that with the increase of switching pulse width, the remnant polarisation and the coercive field increase. A wider switching pulse can result in poorer fatigue properties, which comes from more charged defects diffusing to and being trapped on domain walls. On the other hand, when the compressive stress is applied to films, the fatigue properties can be improved. This phenomenon is due to the reorientation of domains under stress.

Key words: ferroelectric films, polarisation, domains

中图分类号:

77.55.+f

77.80.Dj (Domain structure; hysteresis) 77.22.Ej (Polarization and depolarization) 68.60.Bs (Mechanical and acoustical properties) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

吴秀梅, 陈华, 翟亚, 吕笑梅, 刘云飞, 朱劲松. Effects of switching pulse width and stress on properties of Bi_3.25La_0.75Ti₃O₁₂ thin films[J]. 中国物理B, 2010, 19(3): 36802-036802.

Wu Xiu-Mei(吴秀梅), Chen-Hua(陈华), Zhai-Ya(翟亚), Lu Xiao-Mei(吕笑梅), Liu Yun-Fei(刘云飞), and Zhu Jin-Song(朱劲松). Effects of switching pulse width and stress on properties of Bi_3.25La_0.75Ti₃O₁₂ thin films[J]. Chin. Phys. B, 2010, 19(3): 36802-036802.

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Effects of switching pulse width and stress on properties of Bi_3.25La_0.75Ti₃O₁₂ thin films

Effects of switching pulse width and stress on properties of Bi_3.25La_0.75Ti₃O₁₂ thin films

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