中国物理B ›› 2009, Vol. 18 ›› Issue (8): 3542-3546.doi: 10.1088/1674-1056/18/8/067

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Annealing effects on the structure and electrical characteristics of amorphous Er2O3 films

朱燕艳1, 王佳乐1, 蒋最敏1, 方泽波2   

  1. (1)Surface Physics Laboratory (National Key Laboratory), Fudan University, Shanghai 200433, China; (2)Surface Physics Laboratory (National Key Laboratory), Fudan University, Shanghai 200433, China\;Department of Physics, Shaoxing University, Shaoxing \rm 312000, China
  • 收稿日期:2008-11-22 修回日期:2009-02-13 出版日期:2009-08-20 发布日期:2009-08-20
  • 基金资助:
    Project supported by the China Postdoctoral Science Foundation and Shaoxing Science and Technology Commission (Grant No 2007A21015), also partially supported by the Project of Shanghai Nanotechnology (Grant No 0852NM02400) and the National Natural Science Foundation of China (Grant No 60806031).

Annealing effects on the structure and electrical characteristics of amorphous Er2O3 films

Fang Ze-Bo(方泽波)a)b), Zhu Yan-Yan(朱燕艳)a), Wang Jia-Le(王佳乐)a), and Jiang Zui-Min(蒋最敏)a)†   

  1. a Surface Physics Laboratory (National Key Laboratory), Fudan University, Shanghai 200433, China; b Department of Physics, Shaoxing University, Shaoxing 312000, China
  • Received:2008-11-22 Revised:2009-02-13 Online:2009-08-20 Published:2009-08-20
  • Supported by:
    Project supported by the China Postdoctoral Science Foundation and Shaoxing Science and Technology Commission (Grant No 2007A21015), also partially supported by the Project of Shanghai Nanotechnology (Grant No 0852NM02400) and the National Natural Science Foundation of China (Grant No 60806031).

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摘要： Amorphous Er2O3 films are deposited on Si (001) substrates by using reactive evaporation. This paper reports the evolution of the structure, morphology and electrical characteristics with annealing temperatures in an oxygen ambience. X-ray diffraction and high resolution transimission electron microscopy measurement show that the films remain amorphous even after annealing at 700℃. The capacitance in the accumulation region of Er2O3 films annealed at 450℃ is higher than that of as-deposited films and films annealed at other temperatures. An Er2O3/ErOx/SiOx/Si structure model is proposed to explain the results. The annealed films also exhibit a low leakage current density (around 1.38× 10-4~A/cm2 at a bias of -1~V) due to the evolution of morphology and composition of the films after they are annealed.

Abstract: Amorphous Er2O3 films are deposited on Si (001) substrates by using reactive evaporation. This paper reports the evolution of the structure, morphology and electrical characteristics with annealing temperatures in an oxygen ambience. X-ray diffraction and high resolution transimission electron microscopy measurement show that the films remain amorphous even after annealing at 700℃. The capacitance in the accumulation region of Er2O3 films annealed at 450℃ is higher than that of as-deposited films and films annealed at other temperatures. An Er2O3/ErOx/SiOx/Si structure model is proposed to explain the results. The annealed films also exhibit a low leakage current density (around 1.38× 10-4 A/cm2 at a bias of -1 V) due to the evolution of morphology and composition of the films after they are annealed.

Key words: Er2O3, gate dielectric, amorphous

中图分类号:  (Insulators)

  • 73.61.Ng
61.05.cp (X-ray diffraction) 68.37.Lp (Transmission electron microscopy (TEM)) 68.55.-a (Thin film structure and morphology) 81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)