中国物理B ›› 2009, Vol. 18 ›› Issue (7): 3054-3060.doi: 10.1088/1674-1056/18/7/074

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Influence of lateral size on dielectric properties of ferroelectric thin films with structure transition zones

周静1, 吕天全1, 谢文广2, 曹文武3   

  1. (1)Center of Condensed Matter Science and Technology, Harbin Institute of Technology, Harbin 150001, China; (2)Department of Physical Science and Technology, Heilongjiang University, Harbin 150080, China; (3)Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania, 16802, USA
  • 收稿日期:2009-01-10 修回日期:2009-03-30 出版日期:2009-07-20 发布日期:2009-07-20

Influence of lateral size on dielectric properties of ferroelectric thin films with structure transition zones

Zhou Jing(周静)a), ü Tian-Quan(吕天全)a)†, Xie Wen-Guang(谢文广)b), and Cao Wen-Wu(曹文武)a)c)   

  1. a Center of Condensed Matter Science and Technology, Harbin Institute of Technology, Harbin 150001, China; b Department of Physical Science and Technology, Heilongjiang University, Harbin 150080, China; c Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania, 16802, USA
  • Received:2009-01-10 Revised:2009-03-30 Online:2009-07-20 Published:2009-07-20

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摘要： By taking into account structural transition zones near the lateral and thickness direction edges, this paper uses a modified transverse Ising model to study dielectric properties of a finite size ferroelectric thin film in the framework of the mean-field approximation. The results indicate that the influence of the lateral size on the dielectric susceptibility cannot be neglected and lateral structural transition zones could be a crucial factor that improves the mean susceptibility of the fixed size film.

Abstract: By taking into account structural transition zones near the lateral and thickness direction edges, this paper uses a modified transverse Ising model to study dielectric properties of a finite size ferroelectric thin film in the framework of the mean-field approximation. The results indicate that the influence of the lateral size on the dielectric susceptibility cannot be neglected and lateral structural transition zones could be a crucial factor that improves the mean susceptibility of the fixed size film.

Key words: ferroelectric thin film, transverse Ising model, dielectric properties

中图分类号: 

  • 77.55.+f
68.55.-a (Thin film structure and morphology)