中国物理B ›› 2010, Vol. 19 ›› Issue (7): 77701-077701.doi: 10.1088/1674-1056/19/7/077701

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The hysteresis loops of a ferroelectric bilayer film with surface transition layers

崔莲1, 吕天全1, 薛惠杰1, 孙普男2   

  1. (1)Center of Condensed Matter Science and Technology, Department of Physics, Harbin Institute of Technology, Harbin 150001, China; (2)Department of Physics, Heilongjiang University, Harbin 150080, China
  • 收稿日期:2009-11-30 出版日期:2010-07-15 发布日期:2010-07-15

The hysteresis loops of a ferroelectric bilayer film with surface transition layers

Cui Lian(崔莲)a), Lü Tian-Quan(吕天全)a)†, Sun Pu-Nan(孙普男)b), and Xue Hui-Jie(薛惠杰)a)   

  1. a Center of Condensed Matter Science and Technology, Department of Physics, Harbin Institute of Technology, Harbin 150001, China; b Department of Physics, Heilongjiang University, Harbin 150080, China
  • Received:2009-11-30 Online:2010-07-15 Published:2010-07-15

摘要: Based on the transverse Ising model in the framework of the mean field approximation, this paper discusses a ferroelectric bilayer film with the surface transition layers within each constituent slab and an antiferroelectric interfacial coupling between two slabs. The hysteresis loop of a bilayer film is investigated. The results show that the surface transition layer in a ferroelectric bilayer film plays a significant role in realizing the multiple-state memory.

Abstract: Based on the transverse Ising model in the framework of the mean field approximation, this paper discusses a ferroelectric bilayer film with the surface transition layers within each constituent slab and an antiferroelectric interfacial coupling between two slabs. The hysteresis loop of a bilayer film is investigated. The results show that the surface transition layer in a ferroelectric bilayer film plays a significant role in realizing the multiple-state memory.

Key words: ferroelectric bilayer film, transverse Ising model, hysteresis loops, surface transition layers

中图分类号: 

  • 77.55.+f
77.80.Dj (Domain structure; hysteresis)