SiC epitaxial layers grown by chemical vapour deposition and the fabrication of Schottky barrier diodes

doi:10.1088/1674-1056/19/3/036803

中国物理B ›› 2010, Vol. 19 ›› Issue (3): 36803-036803.doi: 10.1088/1674-1056/19/3/036803

SiC epitaxial layers grown by chemical vapour deposition and the fabrication of Schottky barrier diodes

王悦湖, 张义门, 张玉明, 张林, 贾仁需, 陈达

School of Microelectronics, Xidian University Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China

收稿日期:2009-04-17 修回日期:2009-07-08 出版日期:2010-03-15 发布日期:2010-03-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No.~60876061), 13115 Innovation Engineering Program (Grant No.~2008ZDKG-30) and the Advanced Research Program (Grant No.~51308040302).

SiC epitaxial layers grown by chemical vapour deposition and the fabrication of Schottky barrier diodes

Wang Yue-Hu(王悦湖),^† Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Zhang Lin(张林), Jia Ren-Xu(贾仁需), and Chen Da(陈达)

School of Microelectronics, Xidian University Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China

Received:2009-04-17 Revised:2009-07-08 Online:2010-03-15 Published:2010-03-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No.~60876061), 13115 Innovation Engineering Program (Grant No.~2008ZDKG-30) and the Advanced Research Program (Grant No.~51308040302).

摘要/Abstract

摘要： This paper presents the results of unintentionally doped 4H-SiC epilayers grown on n-type Si-faced 4H-SiC substrates with 8° off-axis toward the [11\overline 2 0] direction by low pressure horizontal hot-wall chemical vapour deposition. Growth temperature and pressure are 1580~°C and 10⁴~Pa, respectively. Good surface morphology of the sample is observed using atomic force microscopy (AFM) and scanning electron microscopy (SEM). Fourier transform infrared spectroscopy (FTIR) and x-ray diffraction (XRD) are used to characterize epitaxial layer thickness and the structural quality of the films respectively. The carrier concentration in the unintentional 4H-SiC homoepitaxial layer is about 6.4×10¹⁴~cm^-3 obtained by c--V measurements. Schottky barrier diodes (SBDs) are fabricated on the epitaxial wafer in order to verify the quality of the wafer and to obtain information about the correlation between background impurity and electrical properties of the devices. Ni and Ti/4H-SiC Schottky barrier diodes with very good performances were obtained and their ideality factors are 1.10 and 1.05 respectively.

Abstract: This paper presents the results of unintentionally doped 4H-SiC epilayers grown on n-type Si-faced 4H-SiC substrates with 8° off-axis toward the [11$\overline 2$ 0] direction by low pressure horizontal hot-wall chemical vapour deposition. Growth temperature and pressure are 1580 °C and 10⁴Pa, respectively. Good surface morphology of the sample is observed using atomic force microscopy (AFM) and scanning electron microscopy (SEM). Fourier transform infrared spectroscopy (FTIR) and x-ray diffraction (XRD) are used to characterize epitaxial layer thickness and the structural quality of the films respectively. The carrier concentration in the unintentional 4H-SiC homoepitaxial layer is about 6.4×10¹⁴cm^-3 obtained by c--V measurements. Schottky barrier diodes (SBDs) are fabricated on the epitaxial wafer in order to verify the quality of the wafer and to obtain information about the correlation between background impurity and electrical properties of the devices. Ni and Ti/4H-SiC Schottky barrier diodes with very good performances were obtained and their ideality factors are 1.10 and 1.05 respectively.

Key words: 4H-silicon carbide, low pressure horizontal hot-wall chemical vapour deposition, atomic force microscope, scanning electron microscopy

中图分类号: (Nucleation and growth)

68.55.A-

81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 85.30.Kk (Junction diodes) 68.37.Ps (Atomic force microscopy (AFM)) 78.30.Hv (Other nonmetallic inorganics) 73.61.Le (Other inorganic semiconductors)

王悦湖, 张义门, 张玉明, 张林, 贾仁需, 陈达. SiC epitaxial layers grown by chemical vapour deposition and the fabrication of Schottky barrier diodes[J]. 中国物理B, 2010, 19(3): 36803-036803.

Wang Yue-Hu(王悦湖), Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Zhang Lin(张林), Jia Ren-Xu(贾仁需), and Chen Da(陈达). SiC epitaxial layers grown by chemical vapour deposition and the fabrication of Schottky barrier diodes[J]. Chin. Phys. B, 2010, 19(3): 36803-036803.

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SiC epitaxial layers grown by chemical vapour deposition and the fabrication of Schottky barrier diodes

SiC epitaxial layers grown by chemical vapour deposition and the fabrication of Schottky barrier diodes

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