中国物理B ›› 2010, Vol. 19 ›› Issue (2): 26804-026804.doi: 10.1088/1674-1056/19/2/026804

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Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition

卢国军1, 朱建军1, 江德生1, 王玉田1, 赵德刚1, 刘宗顺1, 张书明1, 杨辉2   

  1. (1)State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, the Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China; (2)State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, the Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China;Suzhou Institute of Nano-tech and Nano-bionics, the Chinese Academy of Sciences, Suzhou 215123, China
  • 收稿日期:2009-03-24 修回日期:2009-06-02 出版日期:2010-02-15 发布日期:2010-02-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60776047, 60506001, 60476021, 60576003 and 60836003).

Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition

Lu Guo-Jun(卢国军)a), Zhu Jian-Jun(朱建军)a)†, Jiang De-Sheng(江德生)a), Wang Yu-Tian(王玉田) a),Zhao De-Gang(赵德刚)a), Liu Zong-Shun(刘宗顺)a),Zhang Shu-Ming(张书明) a), and Yang Hui(杨辉)a)b)   

  1. a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, the Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China; b Suzhou Institute of Nano-tech and Nano-bionics, the Chinese Academy of Sciences, Suzhou 215123, China
  • Received:2009-03-24 Revised:2009-06-02 Online:2010-02-15 Published:2010-02-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60776047, 60506001, 60476021, 60576003 and 60836003).

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摘要： This paper reports that Al1-xInxN epilayers were grown on GaN template by metalorganic chemical vapor deposition with an In content of 7%--20%. X-ray diffraction results indicate that all these Al1-xInxN epilayers have a relatively low density of threading dislocations. Rutherford backscattering/channeling measurements provide the exact compositional information and show that a gradual variation in composition of the Al1-xInxN epilayer happens along the growth direction. The experimental results of optical reflection clearly show the bandgap energies of Al1-xInxN epilayers. A bowing parameter of 6.5~eV is obtained from the compositional dependence of the energy gap. The cathodoluminescence peak energy of the Al1-xInxN epilayer is much lower than its bandgap, indicating a relatively large Stokes shift in the Al1-xInxN sample.

Abstract: This paper reports that Al1-xInxN epilayers were grown on GaN template by metalorganic chemical vapor deposition with an In content of 7%--20%. X-ray diffraction results indicate that all these Al1-xInxN epilayers have a relatively low density of threading dislocations. Rutherford backscattering/channeling measurements provide the exact compositional information and show that a gradual variation in composition of the Al1-xInxN epilayer happens along the growth direction. The experimental results of optical reflection clearly show the bandgap energies of Al1-xInxN epilayers. A bowing parameter of 6.5 eV is obtained from the compositional dependence of the energy gap. The cathodoluminescence peak energy of the Al1-xInxN epilayer is much lower than its bandgap, indicating a relatively large Stokes shift in the Al1-xInxN sample.

Key words: metalorganic chemical vapor deposition, Al1-xInxN, gradual variation in composition, optical reflectance spectra

中图分类号:  (Thin film structure and morphology)

  • 68.55.-a
81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 78.66.Fd (III-V semiconductors) 68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.) 78.60.Hk (Cathodoluminescence, ionoluminescence) 61.72.Hh (Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.))