中国物理B ›› 2010, Vol. 19 ›› Issue (10): 107504-107504.doi: 10.1088/1674-1056/19/10/107504

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Effects of thin MnAl buffer layer on structural and magnetic properties of MnAl films

张旭辉, 马斌, 张宗芝, 金庆原   

  1. Key Lab of Advanced Photonic Materials and Devices, Laboratory of Advanced Materials and Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China
  • 收稿日期:2010-03-26 修回日期:2010-05-10 出版日期:2010-10-15 发布日期:2010-10-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60490290, 60678008, 10604016, 50771032, and 50771033), and the National Basic Research Program of China (Grant No. 2009CB929201).

Effects of thin MnAl buffer layer on structural and magnetic properties of MnAl films

Zhang Xu-Hui(张旭辉), Ma Bin(马斌)†, Zhang Zong-Zhi(张宗芝), and Jin Qing-Yuan(金庆原)   

  1. Key Lab of Advanced Photonic Materials and Devices, Laboratory of Advanced Materials and Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China
  • Received:2010-03-26 Revised:2010-05-10 Online:2010-10-15 Published:2010-10-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60490290, 60678008, 10604016, 50771032, and 50771033), and the National Basic Research Program of China (Grant No. 2009CB929201).

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摘要： Thin Mn(2 nm)/Al(2 nm) bilayers serving as buffer layers have been prepared prior to the deposition of MnAl films. The ferromagnetic τ-phase forms in the buffer layers at an optimum substrate temperature. As a template it induces the growth of following MnAl film. Compared with the case of film without buffer layer, the growth of non-ferromagnetic phase is suppressed and the structural and magnetic properties of MnAl film are improved. Weak dipolar inter-grain coupling is revealed in the MnAl film, and the magnetic reversal process is dominated by magnetic moment rotation.

Abstract: Thin Mn(2 nm)/Al(2 nm) bilayers serving as buffer layers have been prepared prior to the deposition of MnAl films. The ferromagnetic $\tau$-phase forms in the buffer layers at an optimum substrate temperature. As a template it induces the growth of following MnAl film. Compared with the case of film without buffer layer, the growth of non-ferromagnetic phase is suppressed and the structural and magnetic properties of MnAl film are improved. Weak dipolar inter-grain coupling is revealed in the MnAl film, and the magnetic reversal process is dominated by magnetic moment rotation.

Key words: L10, $\tau$–MnAl, buffer layer

中图分类号:  (Thin film structure and morphology)

  • 68.55.-a
68.55.A- (Nucleation and growth) 75.30.Cr (Saturation moments and magnetic susceptibilities) 75.60.Ej (Magnetization curves, hysteresis, Barkhausen and related effects) 75.70.Cn (Magnetic properties of interfaces (multilayers, superlattices, heterostructures)) 81.15.Cd (Deposition by sputtering)