中国物理B ›› 2009, Vol. 18 ›› Issue (7): 3079-3083.doi: 10.1088/1674-1056/18/7/078

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Thermal stability of Mg2Si epitaxial film formed on Si(111) substrate by solid phase reaction

张天冲1, 梅增霞1, 郭阳1, 薛其坤1, 杜小龙1, 王喜娜2, 张晓娜3, 韩晓东3, 张泽3, 王勇4, 邹进4   

  1. (1)Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; (2)Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;Faculty of Physics & Electronic Technology, Hubei University, Wuhan 430062, China; (3)Beijing University of Technology, Beijing 100022, China; (4)School of Engineering and Centre for Microscopy and Microanalysis, The University of Queensland, St Lucia, QLD 4072, Australia
  • 收稿日期:2008-11-05 修回日期:2009-01-05 出版日期:2009-07-20 发布日期:2009-07-20
  • 基金资助:
    Project supported by the National Natural Science Foundation (Grant Nos 50532090, 60606023 and 60621091), the Ministry of Science and Technology of China (Grant Nos 2002CB613502 and 2007CB936203) and Australia Research Council.

Thermal stability of Mg2Si epitaxial film formed on Si(111) substrate by solid phase reaction

Wang Xi-Na(王喜娜)a)b), Wang Yong(王勇)c), Zou Jin(邹进)c)†, Zhang Tian-Chong(张天冲)a), Mei Zeng-Xia(梅增霞)a), Guo Yang(郭阳)a), Xue Qi-Kun(薛其坤)a), Du Xiao-Long(杜小龙)a)‡, Zhang Xiao-Na(张晓娜)d), Han Xiao-Dong(韩晓东)d), and Zhang Ze(张泽)d)   

  1. a Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; b Faculty of Physics & Electronic Technology, Hubei University, Wuhan 430062, China; c School of Engineering and Centre for Microscopy and Microanalysis, The University of Queensland, St Lucia, QLD 4072, Australia; d Beijing University of Technology, Beijing 100022, China
  • Received:2008-11-05 Revised:2009-01-05 Online:2009-07-20 Published:2009-07-20
  • Supported by:
    Project supported by the National Natural Science Foundation (Grant Nos 50532090, 60606023 and 60621091), the Ministry of Science and Technology of China (Grant Nos 2002CB613502 and 2007CB936203) and Australia Research Council.

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摘要： A single crystalline Mg2Si film was formed by solid phase reaction (SPR) of a Si(111) substrate with an Mg overlayer capped with an oxide layer(s), which was enhanced by post annealing from room temperature to 100~℃ in a molecular beam epitaxy (MBE) system. The thermal stability of the Mg2Si film was then systematically investigated by post annealing in an oxygen-radical ambient at 300~℃, 450~℃ and 650~℃, respectively. The Mg2Si film stayed stable until the annealing temperature reached 450~℃ then it transformed into amorphous MgOx attributed to the decomposition of Mg2Si and the oxidization of dissociated Mg.

Abstract: A single crystalline Mg2Si film was formed by solid phase reaction (SPR) of a Si(111) substrate with an Mg overlayer capped with an oxide layer(s), which was enhanced by post annealing from room temperature to 100 ℃ in a molecular beam epitaxy (MBE) system. The thermal stability of the Mg2Si film was then systematically investigated by post annealing in an oxygen-radical ambient at 300 ℃, 450 ℃ and 650 ℃, respectively. The Mg2Si film stayed stable until the annealing temperature reached 450 ℃ then it transformed into amorphous MgOx attributed to the decomposition of Mg2Si and the oxidization of dissociated Mg.

Key words: Mg2Si, solid phase reaction, thermal stability

中图分类号:  (Thermal stability; thermal effects)

  • 68.60.Dv
68.55.A- (Nucleation and growth) 81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy) 61.72.Cc (Kinetics of defect formation and annealing) 64.75.-g (Phase equilibria) 81.05.Hd (Other semiconductors)