中国物理B ›› 2009, Vol. 18 ›› Issue (7): 3079-3083.doi: 10.1088/1674-1056/18/7/078
张天冲1, 梅增霞1, 郭阳1, 薛其坤1, 杜小龙1, 王喜娜2, 张晓娜3, 韩晓东3, 张泽3, 王勇4, 邹进4
Wang Xi-Na(王喜娜)a)b), Wang Yong(王勇)c), Zou Jin(邹进)c)†, Zhang Tian-Chong(张天冲)a), Mei Zeng-Xia(梅增霞)a), Guo Yang(郭阳)a), Xue Qi-Kun(薛其坤)a), Du Xiao-Long(杜小龙)a)‡, Zhang Xiao-Na(张晓娜)d), Han Xiao-Dong(韩晓东)d), and Zhang Ze(张泽)d)
摘要: A single crystalline Mg2Si film was formed by solid phase reaction (SPR) of a Si(111) substrate with an Mg overlayer capped with an oxide layer(s), which was enhanced by post annealing from room temperature to 100~℃ in a molecular beam epitaxy (MBE) system. The thermal stability of the Mg2Si film was then systematically investigated by post annealing in an oxygen-radical ambient at 300~℃, 450~℃ and 650~℃, respectively. The Mg2Si film stayed stable until the annealing temperature reached 450~℃ then it transformed into amorphous MgOx attributed to the decomposition of Mg2Si and the oxidization of dissociated Mg.
中图分类号: (Thermal stability; thermal effects)