Compact, temperature-stable multi-gigahertz passively modelocked semiconductor disk laser

doi:10.1088/1674-1056/24/8/084208

中国物理B ›› 2015, Vol. 24 ›› Issue (8): 84208-084208.doi: 10.1088/1674-1056/24/8/084208

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇下一篇

Compact, temperature-stable multi-gigahertz passively modelocked semiconductor disk laser

宋晏蓉^a, 郭于鹤洋^a, 张鹏^b, 田金荣^a

a College of Applied Sciences, Beijing University of Technology, Beijing 100124, China;
b College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 400047, China

收稿日期:2015-01-07 修回日期:2015-01-29 出版日期:2015-08-05 发布日期:2015-08-05
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61177047) and the Key Project of the National Natural Science Foundation of China (Grant No. 61235010).

Compact, temperature-stable multi-gigahertz passively modelocked semiconductor disk laser

Song Yan-Rong (宋晏蓉)^a, Guoyu He-Yang (郭于鹤洋)^a, Zhang Peng (张鹏)^b, Tian Jin-Rong (田金荣)^a

a College of Applied Sciences, Beijing University of Technology, Beijing 100124, China;
b College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 400047, China

Received:2015-01-07 Revised:2015-01-29 Online:2015-08-05 Published:2015-08-05
Contact: Song Yan-Rong E-mail:yrsong@bjut.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61177047) and the Key Project of the National Natural Science Foundation of China (Grant No. 61235010).

摘要/Abstract

摘要： We present a compact passively mode-locked semiconductor disk laser at 1045 nm. The gain chip without any post processing consists of 16 compressively strained InGaAs symmetrical step quantum wells in the active region. 3-GHz repetition rate, 4.9-ps pulse duration, and 30-mW average output power are obtained with 1.4 W of 808-nm incident pump power. The temperature stability of the laser is demonstrated to have an ideal shift rate of 0.035 nm/K of the lasing wavelength.

关键词: mode-locked lasers, thermal effects, diode-pumped

Abstract: We present a compact passively mode-locked semiconductor disk laser at 1045 nm. The gain chip without any post processing consists of 16 compressively strained InGaAs symmetrical step quantum wells in the active region. 3-GHz repetition rate, 4.9-ps pulse duration, and 30-mW average output power are obtained with 1.4 W of 808-nm incident pump power. The temperature stability of the laser is demonstrated to have an ideal shift rate of 0.035 nm/K of the lasing wavelength.

Key words: mode-locked lasers, thermal effects, diode-pumped

中图分类号: (Modulation, tuning, and mode locking)

42.60.Fc

68.60.Dv (Thermal stability; thermal effects) 42.55.Xi (Diode-pumped lasers)

宋晏蓉, 郭于鹤洋, 张鹏, 田金荣. Compact, temperature-stable multi-gigahertz passively modelocked semiconductor disk laser[J]. 中国物理B, 2015, 24(8): 84208-084208.

Song Yan-Rong (宋晏蓉), Guoyu He-Yang (郭于鹤洋), Zhang Peng (张鹏), Tian Jin-Rong (田金荣). Compact, temperature-stable multi-gigahertz passively modelocked semiconductor disk laser[J]. Chin. Phys. B, 2015, 24(8): 84208-084208.

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Compact, temperature-stable multi-gigahertz passively modelocked semiconductor disk laser

Compact, temperature-stable multi-gigahertz passively modelocked semiconductor disk laser

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