中国物理B ›› 2021, Vol. 30 ›› Issue (9): 96801-096801.doi: 10.1088/1674-1056/abea94

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Probing thermal properties of vanadium dioxide thin films by time-domain thermoreflectance without metal film

Qing-Jian Lu(陆青鑑)1,2, Min Gao(高敏)1,2,†, Chang Lu(路畅)1,2, Fei Long(龙飞)3, Tai-Song Pan(潘泰松)1,2, and Yuan Lin(林媛)1,2,4,‡   

  1. 1 School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China;
    2 State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
    3 Guangxi Key Laboratory of Optical and Electronic Materials and Devices, School of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, China;
    4 Medico-Engineering Cooperation on Applied Medicine Research Center, University of Electronic Science and Technology of China, Chengdu 610054, China
  • 收稿日期:2020-12-30 修回日期:2021-02-01 接受日期:2021-03-01 出版日期:2021-08-19 发布日期:2021-08-30
  • 通讯作者: Min Gao, Yuan Lin E-mail:mingao@uestc.edu.cn;linyuan@uestc.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61825102, 51872038, and 52021001) and the “111” Project, China (Grant No. B18011).

Probing thermal properties of vanadium dioxide thin films by time-domain thermoreflectance without metal film

Qing-Jian Lu(陆青鑑)1,2, Min Gao(高敏)1,2,†, Chang Lu(路畅)1,2, Fei Long(龙飞)3, Tai-Song Pan(潘泰松)1,2, and Yuan Lin(林媛)1,2,4,‡   

  1. 1 School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China;
    2 State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
    3 Guangxi Key Laboratory of Optical and Electronic Materials and Devices, School of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, China;
    4 Medico-Engineering Cooperation on Applied Medicine Research Center, University of Electronic Science and Technology of China, Chengdu 610054, China
  • Received:2020-12-30 Revised:2021-02-01 Accepted:2021-03-01 Online:2021-08-19 Published:2021-08-30
  • Contact: Min Gao, Yuan Lin E-mail:mingao@uestc.edu.cn;linyuan@uestc.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61825102, 51872038, and 52021001) and the “111” Project, China (Grant No. B18011).

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摘要： Vanadium dioxide (VO2) is a strongly correlated material, and it has become known due to its sharp metal-insulator transition (MIT) near room temperature. Understanding the thermal properties and their change across MIT of VO2 thin film is important for the applications of this material in various devices. Here, the changes in thermal conductivity of epitaxial and polycrystalline VO2 thin film across MIT are probed by the time-domain thermoreflectance (TDTR) method. The measurements are performed in a direct way devoid of deposition of any metal thermoreflectance layer on the VO2 film to attenuate the impact from extra thermal interfaces. It is demonstrated that the method is feasible for the VO2 films with thickness values larger than 100 nm and beyond the phase transition region. The observed reasonable thermal conductivity change rates across MIT of VO2 thin films with different crystal qualities are found to be correlated with the electrical conductivity change rate, which is different from the reported behavior of single crystal VO2 nanowires. The recovery of the relationship between thermal conductivity and electrical conductivity in VO2 film may be attributed to the increasing elastic electron scattering weight, caused by the defects in the film. This work demonstrates the possibility and limitation of investigating the thermal properties of VO2 thin films by the TDTR method without depositing any metal thermoreflectance layer.

关键词: vanadium dioxide thin film, thermal conductivity, time-domain thermoreflectance

Abstract: Vanadium dioxide (VO2) is a strongly correlated material, and it has become known due to its sharp metal-insulator transition (MIT) near room temperature. Understanding the thermal properties and their change across MIT of VO2 thin film is important for the applications of this material in various devices. Here, the changes in thermal conductivity of epitaxial and polycrystalline VO2 thin film across MIT are probed by the time-domain thermoreflectance (TDTR) method. The measurements are performed in a direct way devoid of deposition of any metal thermoreflectance layer on the VO2 film to attenuate the impact from extra thermal interfaces. It is demonstrated that the method is feasible for the VO2 films with thickness values larger than 100 nm and beyond the phase transition region. The observed reasonable thermal conductivity change rates across MIT of VO2 thin films with different crystal qualities are found to be correlated with the electrical conductivity change rate, which is different from the reported behavior of single crystal VO2 nanowires. The recovery of the relationship between thermal conductivity and electrical conductivity in VO2 film may be attributed to the increasing elastic electron scattering weight, caused by the defects in the film. This work demonstrates the possibility and limitation of investigating the thermal properties of VO2 thin films by the TDTR method without depositing any metal thermoreflectance layer.

Key words: vanadium dioxide thin film, thermal conductivity, time-domain thermoreflectance

中图分类号:  (Thermal stability; thermal effects)

  • 68.60.Dv
66.30.Xj (Thermal diffusivity)