Phase transformation in Mg–Sb3Te thin films

doi:10.1088/1674-1056/23/8/087301

中国物理B ›› 2014, Vol. 23 ›› Issue (8): 87301-087301.doi: 10.1088/1674-1056/23/8/087301

• SPECIAL TOPI—International Conference on Nanoscience & Technology, China 2013 • 上一篇下一篇

Phase transformation in Mg–Sb₃Te thin films

李军建^a, 王国祥^b, 陈益敏^a, 沈祥^b, 聂秋华^a, 吕业刚^a, 戴世勋^b, 徐铁锋^b

a Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211, China;
b Laboratory of Infrared Material and Devices, The Advanced Technology Research Institute, Ningbo University, Ningbo 315211, China

收稿日期:2013-09-04 修回日期:2014-03-26 出版日期:2014-08-15 发布日期:2014-08-15
基金资助:
Project supported by the National Key Basic Research Program, China (Grant No. 2012CB722703), the National Natural Science Foundation of China (Grant Nos. 61008041, 61377061, and 61306147), the Program for Innovative Research Team of Ningbo City (Grant No. 2009B21007), and the K. C. Wong Magna Fund in Ningbo University, China.

Phase transformation in Mg–Sb₃Te thin films

Li Jun-Jian (李军建)^a, Wang Guo-Xiang (王国祥)^b, Chen Yi-Min (陈益敏)^a, Shen Xiang (沈祥)^b, Nie Qiu-Hua (聂秋华)^a, Lü Ye-Gang (吕业刚)^a, Dai Shi-Xun (戴世勋)^b, Xu Tie-Feng (徐铁锋)^b

a Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211, China;
b Laboratory of Infrared Material and Devices, The Advanced Technology Research Institute, Ningbo University, Ningbo 315211, China

Received:2013-09-04 Revised:2014-03-26 Online:2014-08-15 Published:2014-08-15
Contact: Shen Xiang E-mail:shenxiang@nbu.edu.cn
Supported by:
Project supported by the National Key Basic Research Program, China (Grant No. 2012CB722703), the National Natural Science Foundation of China (Grant Nos. 61008041, 61377061, and 61306147), the Program for Innovative Research Team of Ningbo City (Grant No. 2009B21007), and the K. C. Wong Magna Fund in Ningbo University, China.

摘要/Abstract

摘要： Mg-doped Sb₃Te films are proposed to improve the performance of phase-change memory (PCM). We prepare Mg-doped Sb₃Te films and investigate their crystallization behaviors, structural, optical and electrical properties. We find that Mg-doping can increase the crystallization temperature, enhance the activation energy, and improve the 10-year data retention of Sb₃Te. Especially Mg_25.19(Sb₃Te)_74.81 shows higher T_c (～ 190 ℃) and larger E_a (～ 3.49 eV), which results in a better data retention maintaining for 10 yr at ～ 112 ℃. Moreover R_a/R_c value is also improved. These excellent properties make Mg-Sb-Te material a promising candidate for the phase-change memory (PCM).

关键词: phase change memory, data retention, Mg-Sb-Te, thermal stability

Abstract: Mg-doped Sb₃Te films are proposed to improve the performance of phase-change memory (PCM). We prepare Mg-doped Sb₃Te films and investigate their crystallization behaviors, structural, optical and electrical properties. We find that Mg-doping can increase the crystallization temperature, enhance the activation energy, and improve the 10-year data retention of Sb₃Te. Especially Mg_25.19(Sb₃Te)_74.81 shows higher T_c (～ 190 ℃) and larger E_a (～ 3.49 eV), which results in a better data retention maintaining for 10 yr at ～ 112 ℃. Moreover R_a/R_c value is also improved. These excellent properties make Mg-Sb-Te material a promising candidate for the phase-change memory (PCM).

Key words: phase change memory, data retention, Mg-Sb-Te, thermal stability

中图分类号: (Metal and metallic alloys)

73.61.At

78.66.Jg (Amorphous semiconductors; glasses) 68.60.Dv (Thermal stability; thermal effects)

李军建, 王国祥, 陈益敏, 沈祥, 聂秋华, 吕业刚, 戴世勋, 徐铁锋. Phase transformation in Mg–Sb₃Te thin films[J]. 中国物理B, 2014, 23(8): 87301-087301.

Li Jun-Jian (李军建), Wang Guo-Xiang (王国祥), Chen Yi-Min (陈益敏), Shen Xiang (沈祥), Nie Qiu-Hua (聂秋华), Lü Ye-Gang (吕业刚), Dai Shi-Xun (戴世勋), Xu Tie-Feng (徐铁锋). Phase transformation in Mg–Sb₃Te thin films[J]. Chin. Phys. B, 2014, 23(8): 87301-087301.

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Phase transformation in Mg–Sb₃Te thin films

Phase transformation in Mg–Sb₃Te thin films

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