Efficient thermal analysis method for large scale compound semiconductor integrated circuits based on heterojunction bipolar transistor

doi:10.1088/1674-1056/27/10/108101

中国物理B ›› 2018, Vol. 27 ›› Issue (10): 108101-108101.doi: 10.1088/1674-1056/27/10/108101

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Efficient thermal analysis method for large scale compound semiconductor integrated circuits based on heterojunction bipolar transistor

Shi-Zheng Yang(杨施政), Hong-Liang Lv(吕红亮), Yu-Ming Zhang(张玉明), Yi-Men Zhang(张义门), Bin Lu(芦宾), Si-Lu Yan(严思璐)

School of Microelectronics, Xidian University, the State Key Laboratory of Wide Band Gap Semiconductor Technology, Xi'an 710071, China

收稿日期:2018-04-23 修回日期:2018-07-02 出版日期:2018-10-05 发布日期:2018-10-05
通讯作者: Hong-Liang Lv E-mail:hllv@mail.xidian.edu.cn
基金资助:
Project supported by the Advance Research Foundation of China (Grant No. 9140Axxx501), the National Defense Advance Research Project, China (Grant No. 3151xxxx301), the Frontier Innovation Program, China (Grant No. 48xx4), and the 111 Project, China (Grant No. B12026).

Efficient thermal analysis method for large scale compound semiconductor integrated circuits based on heterojunction bipolar transistor

Shi-Zheng Yang(杨施政), Hong-Liang Lv(吕红亮), Yu-Ming Zhang(张玉明), Yi-Men Zhang(张义门), Bin Lu(芦宾), Si-Lu Yan(严思璐)

School of Microelectronics, Xidian University, the State Key Laboratory of Wide Band Gap Semiconductor Technology, Xi'an 710071, China

Received:2018-04-23 Revised:2018-07-02 Online:2018-10-05 Published:2018-10-05
Contact: Hong-Liang Lv E-mail:hllv@mail.xidian.edu.cn
Supported by:
Project supported by the Advance Research Foundation of China (Grant No. 9140Axxx501), the National Defense Advance Research Project, China (Grant No. 3151xxxx301), the Frontier Innovation Program, China (Grant No. 48xx4), and the 111 Project, China (Grant No. B12026).

摘要/Abstract

摘要：

In this paper, an efficient thermal analysis method is presented for large scale compound semiconductor integrated circuits based on a heterojunction bipolar transistor with considering the change of thermal conductivity with temperature. The influence caused by the thermal conductivity can be equivalent to the increment of the local temperature surrounding the individual device. The junction temperature for each device can be efficiently calculated by the combination of the semi-analytic temperature distribution function and the iteration of local temperature with high accuracy, providing a temperature distribution for a full chip. Applying this method to the InP frequency divider chip and the GaAs analog to digital converter chip, the computational results well agree with the results from the simulator COMSOL and the infrared thermal imager respectively. The proposed method can also be applied to thermal analysis in various kinds of semiconductor integrated circuits.

关键词: thermal analysis, temperature distribution, iterative algorithm, compound semiconductor integrated circuit

Abstract:

Key words: thermal analysis, temperature distribution, iterative algorithm, compound semiconductor integrated circuit

中图分类号: (Thermal analysis, differential thermal analysis (DTA), differential thermogravimetric analysis)

81.70.Pg

68.60.Dv (Thermal stability; thermal effects) 85.40.Qx (Microcircuit quality, noise, performance, and failure analysis) 44.05.+e (Analytical and numerical techniques)

杨施政, 吕红亮, 张玉明, 张义门, 芦宾, 严思璐. Efficient thermal analysis method for large scale compound semiconductor integrated circuits based on heterojunction bipolar transistor[J]. 中国物理B, 2018, 27(10): 108101-108101.

Shi-Zheng Yang(杨施政), Hong-Liang Lv(吕红亮), Yu-Ming Zhang(张玉明), Yi-Men Zhang(张义门), Bin Lu(芦宾), Si-Lu Yan(严思璐). Efficient thermal analysis method for large scale compound semiconductor integrated circuits based on heterojunction bipolar transistor[J]. Chin. Phys. B, 2018, 27(10): 108101-108101.

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Efficient thermal analysis method for large scale compound semiconductor integrated circuits based on heterojunction bipolar transistor

Efficient thermal analysis method for large scale compound semiconductor integrated circuits based on heterojunction bipolar transistor

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