中国物理B ›› 2009, Vol. 18 ›› Issue (12): 5350-5353.doi: 10.1088/1674-1056/18/12/038

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GaN-based violet laser diodes grown on free-standing GaN substrate

张立群1, 张书明1, 江德生1, 王辉1, 朱建军1, 赵德刚1, 刘宗顺1, 杨辉2   

  1. (1)State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (2)State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China
  • 收稿日期:2009-03-16 修回日期:2009-04-06 出版日期:2009-12-20 发布日期:2009-12-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos 60506001, 60776047, 60476021, 60576003 and 60836003), and the National Basic Research Programme of China (Grant No 2007CB936700).

GaN-based violet laser diodes grown on free-standing GaN substrate

Zhang Li-Qun(张立群)a)†,Zhang Shu-Ming(张书明)a),Jiang De-Sheng(江德生)a), Wang Hui(王辉)a),Zhu Jian-Jun(朱建军)a),Zhao De-Gang(赵德刚)a), Liu Zong-Shun(刘宗顺)a), and Yang Hui(杨辉) a)b)‡   

  1. a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; b Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China
  • Received:2009-03-16 Revised:2009-04-06 Online:2009-12-20 Published:2009-12-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos 60506001, 60776047, 60476021, 60576003 and 60836003), and the National Basic Research Programme of China (Grant No 2007CB936700).

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摘要： A violet laser diode (LD) structure is grown on a free-standing c-plane GaN substrate and 4~μ m× 800~μ m ridge waveguide LDs are fabricated. The electrical and the optical characteristics of LDs under different facet-coating and chip-mounting conditions are investigated under pulse mode operation. The active region temperatures of p-side up and p-side down mounted LDs are calculated with different injection currents. The calculated thermal resistances of p-side up and p-side down mounted LDs are 4.6~K/W and 3~K/W, respectively. The threshold current of the p-side down mounted LD is much lower than that of the p-side up mounted LD. The blue shift of the emission wavelength with increasing injection current is observed only for the LD with p-side down mounting configuration, due to the more efficient heat dissipation.

Abstract: A violet laser diode (LD) structure is grown on a free-standing c-plane GaN substrate and 4 μm × 800 μm ridge waveguide LDs are fabricated. The electrical and the optical characteristics of LDs under different facet-coating and chip-mounting conditions are investigated under pulse mode operation. The active region temperatures of p-side up and p-side down mounted LDs are calculated with different injection currents. The calculated thermal resistances of p-side up and p-side down mounted LDs are 4.6 K/W and 3 K/W, respectively. The threshold current of the p-side down mounted LD is much lower than that of the p-side up mounted LD. The blue shift of the emission wavelength with increasing injection current is observed only for the LD with p-side down mounting configuration, due to the more efficient heat dissipation.

Key words: GaN laser diode, mounting configuration, active region temperature

中图分类号:  (Semiconductor lasers; laser diodes)

  • 42.55.Px
42.60.By (Design of specific laser systems) 42.86.+b (Optical workshop techniques)