中国物理B ›› 2009, Vol. 18 ›› Issue (10): 4474-4478.doi: 10.1088/1674-1056/18/10/062

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Physical simulations and experimental results of 4H—SiC MESFETs on high purity semi-insulating substrates

韩平1, 陈刚2, 柏松3, 李哲洋3, 吴鹏3, 陈征3   

  1. (1)Jiangsu Provincial Key Lab of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China; (2)Jiangsu Provincial Key Lab of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China;National Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute, Nanjing; (3)National Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China
  • 收稿日期:2009-02-26 修回日期:2009-04-28 出版日期:2009-10-20 发布日期:2009-10-20

Physical simulations and experimental results of 4H—SiC MESFETs on high purity semi-insulating substrates

Chen Gang(陈刚)a)b)†, Bai Song(柏松)b), Li Zhe-Yang(李哲洋)b), Wu Peng(吴鹏)b), Chen Zheng(陈征)b), and Han Pin(韩平)a)   

  1. a Jiangsu Provincial Key Lab of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China; b National Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China
  • Received:2009-02-26 Revised:2009-04-28 Online:2009-10-20 Published:2009-10-20

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摘要： In this paper we report on DC and RF simulations and experimental results of 4H--SiC metal semiconductor field effect transistors (MESFETs) on high purity semi-insulating substrates. DC and small-signal measurements are compared with simulations. We design our device process to fabricate n-channel 4H--SiC MESFETs with 100~μm gate periphery. At 30~V drain voltage, the maximum current density is 440~mA/mm and the maximum transconductance is 33~mS/mm. For the continuous wave (CW) at a frequency of 2~GHz, the maximum output power density is measured to be 6.6~W/mm, with a gain of 12~dB and power-added efficiency of 33.7％. The cut-off frequency (fT) and the maximum frequency (fmax) are 9~GHz and 24.9~GHz respectively. The simulation results of fT and fmax are 11.4~GHz and 38.6~GHz respectively.

Abstract: In this paper we report on DC and RF simulations and experimental results of 4H--SiC metal semiconductor field effect transistors (MESFETs) on high purity semi-insulating substrates. DC and small-signal measurements are compared with simulations. We design our device process to fabricate n-channel 4H--SiC MESFETs with 100 μm gate periphery. At 30 V drain voltage, the maximum current density is 440 mA/mm and the maximum transconductance is 33 mS/mm. For the continuous wave (CW) at a frequency of 2 GHz, the maximum output power density is measured to be 6.6 W/mm, with a gain of 12 dB and power-added efficiency of 33.7％. The cut-off frequency (fT) and the maximum frequency (fmax) are 9 GHz and 24.9 GHz respectively. The simulation results of fT and fmax are 11.4 GHz and 38.6 GHz respectively.

Key words: 4H--SiC, MESFET, simulation, microwave

中图分类号:  (Field effect devices)

  • 85.30.Tv
85.30.De (Semiconductor-device characterization, design, and modeling)