中国物理B ›› 2009, Vol. 18 ›› Issue (10): 4465-4469.doi: 10.1088/1674-1056/18/10/060

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The modulation of Schottky barrier height of NiSi/n-Si Schottky diodes by silicide as diffusion source technique

安霞, 范春晖, 黄如, 郭岳, 徐聪, 张兴   

  1. Institute of Microelectronics, Peking University, Beijing 100871, China
  • 收稿日期:2009-02-27 修回日期:2009-04-02 出版日期:2009-10-20 发布日期:2009-10-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos 60625403, 60806033, 90207004), the State Key Development Program for Basic Research of China (Grant No 2006CB302701) and the NCET Program.

The modulation of Schottky barrier height of NiSi/n-Si Schottky diodes by silicide as diffusion source technique

An Xia(安霞)† , Fan Chun-Hui(范春晖), Huang Ru(黄如)‡, Guo Yue(郭岳), Xu Cong(徐聪), Zhang Xing(张兴), and Wang Yang-Yuan(王阳元)   

  1. Institute of Microelectronics, Peking University, Beijing 100871, China
  • Received:2009-02-27 Revised:2009-04-02 Online:2009-10-20 Published:2009-10-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos 60625403, 60806033, 90207004), the State Key Development Program for Basic Research of China (Grant No 2006CB302701) and the NCET Program.

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摘要： This paper reports that the Schottky barrier height modulation of NiSi/n-Si is experimentally investigated by adopting a novel silicide-as-diffusion-source technique, which avoids the damage to the NiSi/Si interface induced from the conventional dopant segregation method. In addition, the impact of post-BF2 implantation after silicidation on the surface morphology of Ni silicides is also illustrated. The thermal stability of Ni silicides can be improved by silicide-as-diffusion-source technique. Besides, the electron Schottky barrier height is successfully modulated by 0.11~eV at a boron dose of 1015~cm-2 in comparison with the non-implanted samples. The change of barrier height is not attributed to the phase change of silicide films but due to the boron pile-up at the interface of NiSi and Si substrate which causes the upward bending of conducting band. The results demonstrate the feasibility of novel silicide-as-diffusion-source technique for the fabrication of Schottky source/drain Si MOS devices.

Abstract: This paper reports that the Schottky barrier height modulation of NiSi/n-Si is experimentally investigated by adopting a novel silicide-as-diffusion-source technique, which avoids the damage to the NiSi/Si interface induced from the conventional dopant segregation method. In addition, the impact of post-BF2 implantation after silicidation on the surface morphology of Ni silicides is also illustrated. The thermal stability of Ni silicides can be improved by silicide-as-diffusion-source technique. Besides, the electron Schottky barrier height is successfully modulated by 0.11 eV at a boron dose of 1015 cm-2 in comparison with the non-implanted samples. The change of barrier height is not attributed to the phase change of silicide films but due to the boron pile-up at the interface of NiSi and Si substrate which causes the upward bending of conducting band. The results demonstrate the feasibility of novel silicide-as-diffusion-source technique for the fabrication of Schottky source/drain Si MOS devices.

Key words: Schottky barrier height, silicide-as-diffusion source, Ni silicide

中图分类号:  (Junction diodes)

  • 85.30.Kk
85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Hi (Surface barrier, boundary, and point contact devices)