中国物理B ›› 2009, Vol. 18 ›› Issue (10): 4413-4417.doi: 10.1088/1674-1056/18/10/051

• • 上一篇    下一篇

The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates

陈贵锋1, 吴玉新2, 朱建军2, 赵德刚2, 刘宗顺2, 江德生2, 张书明2, 王玉田2, 王辉2, 杨辉3   

  1. (1)Institute of Information Function Materials, Hebei University of Technology, Tianjin 300130, China; (2)State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China; (3)State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China;Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China
  • 收稿日期:2009-02-18 修回日期:2009-03-17 出版日期:2009-10-20 发布日期:2009-10-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos 60506001, 60476021, 60576003, 60776047 and 60836003), the National Basic Research Program of China (Grant No 2007CB936700) and Project of Technological Research and Developme

The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates

Wu Yu-Xin(吴玉新)a), Zhu Jian-Jun(朱建军)a)†, Zhao De-Gang(赵德刚)a), Liu Zong-Shun(刘宗顺)a), Jiang De-Sheng(江德生)a), Zhang Shu-Ming(张书明)a), Wang Yu-Tian(王玉田)a), Wang Hui (王辉)a), Chen Gui-Feng(陈贵锋)b), and Yang Hui(杨辉)a)c)   

  1. a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China; b Institute of Information Function Materials, Hebei University of Technology, Tianjin 300130, China; c Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China
  • Received:2009-02-18 Revised:2009-03-17 Online:2009-10-20 Published:2009-10-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos 60506001, 60476021, 60576003, 60776047 and 60836003), the National Basic Research Program of China (Grant No 2007CB936700) and Project of Technological Research and Developme

PDF (PC)

1237

赞

摘要： High-quality and nearly crack-free GaN epitaxial layer was obtained by inserting a single AlGaN interlayer between GaN epilayer and high-temperature AlN buffer layer on Si (111) substrate by metalorganic chemical vapor deposition. This paper investigates the effect of AlGaN interlayer on the structural properties of the resulting GaN epilayer. It confirms from the optical microscopy and Raman scattering spectroscopy that the AlGaN interlayer has a remarkable effect on introducing relative compressive strain to the top GaN layer and preventing the formation of cracks. X-ray diffraction and transmission electron microscopy analysis reveal that a significant reduction in both screw and edge threading dislocations is achieved in GaN epilayer by the insertion of AlGaN interlayer. The process of threading dislocation reduction in both AlGaN interlayer and GaN epilayer is demonstrated.

Abstract: High-quality and nearly crack-free GaN epitaxial layer was obtained by inserting a single AlGaN interlayer between GaN epilayer and high-temperature AlN buffer layer on Si (111) substrate by metalorganic chemical vapor deposition. This paper investigates the effect of AlGaN interlayer on the structural properties of the resulting GaN epilayer. It confirms from the optical microscopy and Raman scattering spectroscopy that the AlGaN interlayer has a remarkable effect on introducing relative compressive strain to the top GaN layer and preventing the formation of cracks. X-ray diffraction and transmission electron microscopy analysis reveal that a significant reduction in both screw and edge threading dislocations is achieved in GaN epilayer by the insertion of AlGaN interlayer. The process of threading dislocation reduction in both AlGaN interlayer and GaN epilayer is demonstrated.

Key words: GaN, Si (111) substrate, metalorganic chemical vapor deposition, AlGaN interlayer

中图分类号:  (Thin film structure and morphology)

  • 68.55.-a
68.37.Lp (Transmission electron microscopy (TEM)) 68.60.Bs (Mechanical and acoustical properties) 78.30.Fs (III-V and II-VI semiconductors) 78.66.Fd (III-V semiconductors) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))