中国物理B ›› 2022, Vol. 31 ›› Issue (3): 38504-038504.doi: 10.1088/1674-1056/ac3224

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Facile sensitizing of PbSe film for near-infrared photodetector by microwave plasma processing

Kangyi Zhao(赵康伊)1, Shuanglong Feng(冯双龙)2,†, Chan Yang(杨婵)2, Jun Shen(申钧)2, and Yongqi Fu(付永启)1,‡   

  1. 1 School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China;
    2 Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China
  • 收稿日期:2021-03-09 修回日期:2021-09-23 接受日期:2021-10-22 出版日期:2022-02-22 发布日期:2022-03-01
  • 通讯作者: Shuanglong Feng, Yongqi Fu E-mail:fengshuanglong@cigit.ac.cn;yqfu@uestc.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61605207, 61704172, and 61705229), the Key Research and Development Plan of the Ministry of Science and Technology of China (Grant No. 2017YFE0131900), the Western Light Program of the Chinese Academy of Sciences, and Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2018416).

Facile sensitizing of PbSe film for near-infrared photodetector by microwave plasma processing

Kangyi Zhao(赵康伊)1, Shuanglong Feng(冯双龙)2,†, Chan Yang(杨婵)2, Jun Shen(申钧)2, and Yongqi Fu(付永启)1,‡   

  1. 1 School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China;
    2 Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China
  • Received:2021-03-09 Revised:2021-09-23 Accepted:2021-10-22 Online:2022-02-22 Published:2022-03-01
  • Contact: Shuanglong Feng, Yongqi Fu E-mail:fengshuanglong@cigit.ac.cn;yqfu@uestc.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61605207, 61704172, and 61705229), the Key Research and Development Plan of the Ministry of Science and Technology of China (Grant No. 2017YFE0131900), the Western Light Program of the Chinese Academy of Sciences, and Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2018416).

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摘要： High quality PbSe film was first fabricated by a thermal evaporation method, and then the effect of plasma sensitization on the PbSe film was systemically investigated. Typical detectivity and significant photosensitivity are achieved in the PbSe-based photodetector, reaching maximum values of 7.6×109 cm·Hz1/2/W and 1.723 A/W, respectively. Compared with thermal annealing, plasma sensitization makes the sensitization easier and significantly improves the performance.

关键词: PbSe film, infrared photodetector, plasma processing

Abstract: High quality PbSe film was first fabricated by a thermal evaporation method, and then the effect of plasma sensitization on the PbSe film was systemically investigated. Typical detectivity and significant photosensitivity are achieved in the PbSe-based photodetector, reaching maximum values of 7.6×109 cm·Hz1/2/W and 1.723 A/W, respectively. Compared with thermal annealing, plasma sensitization makes the sensitization easier and significantly improves the performance.

Key words: PbSe film, infrared photodetector, plasma processing

中图分类号:  (Dielectric thin films)

  • 77.55.-g
07.57.-c (Infrared, submillimeter wave, microwave and radiowave instruments and equipment) 52.77.Dq (Plasma-based ion implantation and deposition)