中国物理B ›› 2007, Vol. 16 ›› Issue (3): 817-820.doi: 10.1088/1009-1963/16/3/043

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Comparison of two kinds of active layers for high-power narrow-stripe distributed feedback laser diodes

付生辉, 宋国峰, 陈良惠   

  1. Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2006-07-04 修回日期:2006-08-05 出版日期:2007-03-20 发布日期:2007-03-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 10374085).

Comparison of two kinds of active layers for high-power narrow-stripe distributed feedback laser diodes

Fu Sheng-Hui(付生辉)†, Song Guo-Feng(宋国峰), and Chen Liang-Hui(陈良惠)   

  1. Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2006-07-04 Revised:2006-08-05 Online:2007-03-20 Published:2007-03-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 10374085).

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摘要： Usually GaAs/AlGaAs is utilized as an active layer material in laser diodes operating in the spectral range of 800--850 nm. In this work, in addition to a traditional unstrained GaAs/AlGaAs distributed feedback (DFB) laser diode, a compressively strained InGaAlAs/AlGaAs DFB laser diode is numerically investigated in characteristic. The simulation results show that the compressively strained DFB laser diode has a lower transparency carrier density, higher gain, lower Auger recombination rate, and higher stimulated recombination rate, which lead to better a device performance, than the traditional unstrained GaAs/AlGaAs DFB laser diode.

Abstract: Usually GaAs/AlGaAs is utilized as an active layer material in laser diodes operating in the spectral range of 800--850 nm. In this work, in addition to a traditional unstrained GaAs/AlGaAs distributed feedback (DFB) laser diode, a compressively strained InGaAlAs/AlGaAs DFB laser diode is numerically investigated in characteristic. The simulation results show that the compressively strained DFB laser diode has a lower transparency carrier density, higher gain, lower Auger recombination rate, and higher stimulated recombination rate, which lead to better a device performance, than the traditional unstrained GaAs/AlGaAs DFB laser diode.

Key words: InGaAlAs/AlGaAs, distributed feedback laser diode, numerical simulation

中图分类号:  (Semiconductor lasers; laser diodes)

  • 42.55.Px
42.60.By (Design of specific laser systems)