中国物理B ›› 2007, Vol. 16 ›› Issue (3): 812-816.doi: 10.1088/1009-1963/16/3/042

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Corner effects in double-gate/gate-all-around MOSFETs

侯晓宇, 周发龙, 黄如, 张兴   

  1. Institute of Microelectronics, Peking University, Beijing 100871, China
  • 收稿日期:2006-08-15 修回日期:2006-09-08 出版日期:2007-03-20 发布日期:2007-03-20
  • 基金资助:
    Project supported by State Key Fundamental Research Project of China (Grant No 2000036501) and the National Natural Science Foundation of China (Grant No 90207004).

Corner effects in double-gate/gate-all-around MOSFETs

Hou Xiao-Yu(侯晓宇), Zhou Fa-Long(周发龙), Huang Ru(黄如)†, and Zhang Xing(张兴)   

  1. Institute of Microelectronics, Peking University, Beijing 100871, China
  • Received:2006-08-15 Revised:2006-09-08 Online:2007-03-20 Published:2007-03-20
  • Supported by:
    Project supported by State Key Fundamental Research Project of China (Grant No 2000036501) and the National Natural Science Foundation of China (Grant No 90207004).

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摘要： Two kinds of corner effects existing in double-gate (DG) and gate-all-around (GAA) MOSFETs have been investigated by three-dimensional (3D) and two-dimensional (2D) simulations. It is found that the corner effect caused by conterminous gates, which is usually deemed to deteriorate the transistor performance, does not always play a negative role in GAA transistors. It can suppress the leakage current of transistors with low channel doping, though it will enhance the leakage current at high channel doping. The study of another kind of corner effect, which exists in the corner at the bottom of the silicon pillar of DG/GAA vertical MOSFETs, indicates that the D-top structure with drain on the top of the device pillar of vertical transistor shows great advantage due to lower leakage current and better DIBL (drain induced barrier lowering) effect immunity than the S-top structure with source on the top of the device pillar. Therefore the D-top structure is more suitable when the requirement in leakage current and short channel character is critical.

Abstract: Two kinds of corner effects existing in double-gate (DG) and gate-all-around (GAA) MOSFETs have been investigated by three-dimensional (3D) and two-dimensional (2D) simulations. It is found that the corner effect caused by conterminous gates, which is usually deemed to deteriorate the transistor performance, does not always play a negative role in GAA transistors. It can suppress the leakage current of transistors with low channel doping, though it will enhance the leakage current at high channel doping. The study of another kind of corner effect, which exists in the corner at the bottom of the silicon pillar of DG/GAA vertical MOSFETs, indicates that the D-top structure with drain on the top of the device pillar of vertical transistor shows great advantage due to lower leakage current and better DIBL (drain induced barrier lowering) effect immunity than the S-top structure with source on the top of the device pillar. Therefore the D-top structure is more suitable when the requirement in leakage current and short channel character is critical.

Key words: GAA, DG, DIBL, S-top, D-top, corner effect

中图分类号:  (Field effect devices)

  • 85.30.Tv
85.30.De (Semiconductor-device characterization, design, and modeling)