中国物理B ›› 2007, Vol. 16 ›› Issue (2): 537-541.doi: 10.1088/1009-1963/16/2/042

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Investigation of gate current in nano-scale MOSFETs by Monte Carlo solution of quantum Boltzmann equation

夏志良, 杜刚, 刘晓彦, 康晋锋, 韩汝琦   

  1. Institute of Microelectronics, Peking University, Beijing 100871, China
  • 收稿日期:2006-06-07 修回日期:2006-08-28 出版日期:2007-02-20 发布日期:2007-02-20

Investigation of gate current in nano-scale MOSFETs by Monte Carlo solution of quantum Boltzmann equation

Xia Zhi-Liang(夏志良), Du Gang(杜刚), Liu Xiao-Yan(刘晓彦)†, Kang Jin-Feng(康晋锋), and Han Ru-Qi(韩汝琦)   

  1. Institute of Microelectronics, Peking University, Beijing 100871, China
  • Received:2006-06-07 Revised:2006-08-28 Online:2007-02-20 Published:2007-02-20

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摘要： This paper investigates gate current through ultra-thin gate oxide of nano-scale metal oxide semiconductor field effect transistors (MOSFETs), using two-dimensional (2D) full-band self-consistent ensemble Monte Carlo method based on solving quantum Boltzmann equation. Direct tunnelling, Fowler--Nordheim tunnelling and thermionic emission currents have been taken into account for the calculation of total gate current. The 2D effect on the gate current is investigated by including the details of the energy distribution for electron tunnelling through the barrier. In order to investigate the properties of nano scale MOSFETs, it is necessary to simulate gate tunnelling current in 2D including non-equilibrium transport.

Abstract: This paper investigates gate current through ultra-thin gate oxide of nano-scale metal oxide semiconductor field effect transistors (MOSFETs), using two-dimensional (2D) full-band self-consistent ensemble Monte Carlo method based on solving quantum Boltzmann equation. Direct tunnelling, Fowler--Nordheim tunnelling and thermionic emission currents have been taken into account for the calculation of total gate current. The 2D effect on the gate current is investigated by including the details of the energy distribution for electron tunnelling through the barrier. In order to investigate the properties of nano scale MOSFETs, it is necessary to simulate gate tunnelling current in 2D including non-equilibrium transport.

Key words: tunnelling, quantum effect, Monte Carlo, metal oxide semiconductor field effect transistor

中图分类号:  (Field effect devices)

  • 85.30.Tv
73.40.Gk (Tunneling) 79.40.+z (Thermionic emission) 85.30.De (Semiconductor-device characterization, design, and modeling)