中国物理B ›› 2007, Vol. 16 ›› Issue (10): 3108-3113.doi: 10.1088/1009-1963/16/10/048

• • 上一篇    下一篇

Preparation, structural and electrical properties of zinc oxide grown on silicon nanoporous pillar array

姚志涛, 孙新瑞, 许海军, 李新建   

  1. Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052, China
  • 收稿日期:2007-01-31 修回日期:2007-02-04 出版日期:2007-10-08 发布日期:2007-10-08
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 10574112).

Preparation, structural and electrical properties of zinc oxide grown on silicon nanoporous pillar array

Yao Zhi-Tao(姚志涛), Sun Xin-Rui(孙新瑞), Xu Hai-Jun(许海军), and Li Xin-Jian(李新建)†   

  1. Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052, China
  • Received:2007-01-31 Revised:2007-02-04 Online:2007-10-08 Published:2007-10-08
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 10574112).

PDF (PC)

629

赞

摘要： Polycrystalline thick film of zinc oxide (ZnO) is grown on a unique silicon substrate with a hierarchical structure, silicon nanoporous pillar array (Si-NPA), by using a vapour phase transport method. It is found that as-grown ZnO film is composed of closely packed ZnO crystallites with an average size of $\sim$$10\,\mu$m. The film resistivity of ZnO/Si-NPA is measured to be $\sim$$8.9\Omega\cdot$\,cm by the standard four probe method. The lengthwise $I$-$V$ curve of ZnO/Si-NPA heterostructure is measured. Theoretical analysis shows that the carrier transport across ZnO/Si-NPA heterojunction is dominated by two mechanisms, i.e. a thermionic process at high voltages and a quantum tunnelling process at low voltages.

关键词: silicon nanoporous pillar array (Si-NPA), ZnO/Si-NPA heterostructure, thermionic process

Abstract: Polycrystalline thick film of zinc oxide (ZnO) is grown on a unique silicon substrate with a hierarchical structure, silicon nanoporous pillar array (Si-NPA), by using a vapour phase transport method. It is found that as-grown ZnO film is composed of closely packed ZnO crystallites with an average size of $\sim$$10\mu$m. The film resistivity of ZnO/Si-NPA is measured to be $\sim$$8.9\Omega\cdot$cm by the standard four probe method. The lengthwise $I$-$V$ curve of ZnO/Si-NPA heterostructure is measured. Theoretical analysis shows that the carrier transport across ZnO/Si-NPA heterojunction is dominated by two mechanisms, i.e. a thermionic process at high voltages and a quantum tunnelling process at low voltages.

Key words: silicon nanoporous pillar array (Si-NPA), ZnO/Si-NPA heterostructure, thermionic process

中图分类号:  (Thin film structure and morphology)

  • 68.55.-a
68.55.A- (Nucleation and growth) 73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 73.50.Gr (Charge carriers: generation, recombination, lifetime, trapping, mean free paths) 73.61.Ga (II-VI semiconductors)