中国物理B ›› 2007, Vol. 16 ›› Issue (1): 245-248.doi: 10.1088/1009-1963/16/1/042
韩德栋, 康晋锋, 刘晓彦, 孙雷, 罗浩, 韩汝琦
Han De-Dong(韩德栋)†, Kang Jin-Feng(康晋锋), Liu Xiao-Yan(刘晓彦), Sun Lei(孙雷), Luo Hao(罗浩), and Han Ru-Qi(韩汝琦)
摘要: This paper reports that the high-K HfO2 gate dielectrics are fabricated on n-germanium substrates by sputtering Hf on Ge and following by a furnace annealing. The impacts of sputtering ambient, annealing ambient and annealing temperature on the electrical properties of high-K HfO2 gate dielectrics on germanium substrates are investigated. Experimental results indicate that high-K HfO2 gate dielectrics on germanium substrates with good electrical characteristics are obtained, the electrical properties of high-K HfO2 gate dielectrics is strongly correlated with sputtering ambient, annealing ambient and annealing temperature.
中图分类号: (Elemental semiconductors)