中国物理B ›› 2007, Vol. 16 ›› Issue (1): 245-248.doi: 10.1088/1009-1963/16/1/042

• • 上一篇    下一篇

Fabrication and characteristics of high-K HfO2 gate dielectrics on n-germanium

韩德栋, 康晋锋, 刘晓彦, 孙雷, 罗浩, 韩汝琦   

  1. Institute of Microelectronics, Peking University,Beijing 100871, China
  • 收稿日期:2006-03-28 修回日期:2006-07-21 出版日期:2007-02-01 发布日期:2007-02-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No~90307006), by the National High Tech. Development Program of China (Grant No~2003AA1Z1370), and by the State Key Development Program for Basic Research of China (Grant No~G200

Fabrication and characteristics of high-K HfO2 gate dielectrics on n-germanium

Han De-Dong(韩德栋)†, Kang Jin-Feng(康晋锋), Liu Xiao-Yan(刘晓彦), Sun Lei(孙雷), Luo Hao(罗浩), and Han Ru-Qi(韩汝琦)   

  1. Institute of Microelectronics, Peking University, Beijing 100871, China
  • Received:2006-03-28 Revised:2006-07-21 Online:2007-02-01 Published:2007-02-01
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No~90307006), by the National High Tech. Development Program of China (Grant No~2003AA1Z1370), and by the State Key Development Program for Basic Research of China (Grant No~G200

PDF (PC)

615

赞

摘要： This paper reports that the high-K HfO2 gate dielectrics are fabricated on n-germanium substrates by sputtering Hf on Ge and following by a furnace annealing. The impacts of sputtering ambient, annealing ambient and annealing temperature on the electrical properties of high-K HfO2 gate dielectrics on germanium substrates are investigated. Experimental results indicate that high-K HfO2 gate dielectrics on germanium substrates with good electrical characteristics are obtained, the electrical properties of high-K HfO2 gate dielectrics is strongly correlated with sputtering ambient, annealing ambient and annealing temperature.

关键词: Germanium, high-K, HfO2

Abstract: This paper reports that the high-K HfO2 gate dielectrics are fabricated on n-germanium substrates by sputtering Hf on Ge and following by a furnace annealing. The impacts of sputtering ambient, annealing ambient and annealing temperature on the electrical properties of high-K HfO2 gate dielectrics on germanium substrates are investigated. Experimental results indicate that high-K HfO2 gate dielectrics on germanium substrates with good electrical characteristics are obtained, the electrical properties of high-K HfO2 gate dielectrics is strongly correlated with sputtering ambient, annealing ambient and annealing temperature.

Key words: Germanium, high-K, HfO2

中图分类号:  (Elemental semiconductors)

  • 73.61.Cw
85.30.Tv (Field effect devices)