中国物理B ›› 2005, Vol. 14 ›› Issue (9): 1886-1891.doi: 10.1088/1009-1963/14/9/036

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The conduction mechanism of stress induced leakage current through ultra-thin gate oxide under constant voltage stresses

王彦刚1, 许铭真1, 谭长华1, 段小蓉1, J.F.Zhang2   

  1. (1)Institute of Microelectronics, Peking University, Beijing 100871, China; (2)School of Engineering, Liverpool John Moores University,UK
  • 收稿日期:2005-03-18 修回日期:2005-04-13 出版日期:2005-09-20 发布日期:2005-09-20
  • 基金资助:
    Project supported by the Special Foundation for State Major Basic Research Program of China (Grant No TG2000-036503).

The conduction mechanism of stress induced leakage current through ultra-thin gate oxide under constant voltage stresses

Wang Yan-Gang (王彦刚)a, Xu Ming-Zhen (许铭真)a, Tan Chang-Hua (谭长华)a, Zhang J.F.b, Duan Xiao-Rong (段小蓉)a   

  1. a Institute of Microelectronics, Peking University, Beijing 100871, China; b School of Engineering, Liverpool John Moores University, UK
  • Received:2005-03-18 Revised:2005-04-13 Online:2005-09-20 Published:2005-09-20
  • Supported by:
    Project supported by the Special Foundation for State Major Basic Research Program of China (Grant No TG2000-036503).

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摘要： The conduction mechanism of stress induced leakage current (SILC) through 2{nm} gate oxide is studied over a gate voltage range between 1.7V and stress voltage under constant voltage stress (CVS). The simulation results show that the SILC is formed by trap-assisted tunnelling (TAT) process which is dominated by oxide traps induced by high field stresses. Their energy levels obtained by this work are approximately 1.9eV from the oxide conduction band, and the traps are believed to be the oxygen-related donor-like defects induced by high field stresses. The dependence of the trap density on stress time and oxide electric field is also investigated.

关键词: stress induced leakage current, oxygen-related donor-like defects, trap-assisted tunnelling, ultra-thin gate oxide

Abstract: The conduction mechanism of stress induced leakage current (SILC) through 2nm gate oxide is studied over a gate voltage range between 1.7V and stress voltage under constant voltage stress (CVS). The simulation results show that the SILC is formed by trap-assisted tunnelling (TAT) process which is dominated by oxide traps induced by high field stresses. Their energy levels obtained by this work are approximately 1.9eV from the oxide conduction band, and the traps are believed to be the oxygen-related donor-like defects induced by high field stresses. The dependence of the trap density on stress time and oxide electric field is also investigated.

Key words: stress induced leakage current, oxygen-related donor-like defects, trap-assisted tunnelling, ultra-thin gate oxide

中图分类号:  (Field effect devices)

  • 85.30.Tv
85.30.De (Semiconductor-device characterization, design, and modeling)