中国物理B ›› 2005, Vol. 14 ›› Issue (9): 1882-1885.doi: 10.1088/1009-1963/14/9/035

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Accelerated oxygen precipitation in fast neutron irradiated Czochralski silicon

陈东风1, 李洪涛1, 牛萍娟2, 马巧云3, 李养贤3, 陈贵锋3, 杨帅3, 刘丽丽3   

  1. (1)China Institute of Atomic Energy, Beijing 102413,China; (2)School of Information and Communication Engineering,Tianjin Polytechnic University,Tianjin 300160, China; (3)School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China
  • 收稿日期:2005-03-23 出版日期:2005-09-20 发布日期:2005-09-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos 50032010 and 50472034) and the Natural Science Foundation of Hebei Province, China (Grant Nos 601047 and E2005000048).

Accelerated oxygen precipitation in fast neutron irradiated Czochralski silicon

Ma Qiao-Yun (马巧云)a, Li Yang-Xian (李养贤)a, Chen Gui-Feng (陈贵锋)a, Yang Shuai (杨帅)a, Liu Li-Li (刘丽丽)a, Niu Ping-Juan (牛萍娟)b, Chen Dong-Feng (陈东风)c, Li Hong-Tao (李洪涛)c    

  1. a School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China; b School of Information and Communication Engineering, Tianjin Polytechnic University, Tianjin 300160, China; c China Institute of Atomic Energy, Beijing 102413, China
  • Received:2005-03-23 Online:2005-09-20 Published:2005-09-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos 50032010 and 50472034) and the Natural Science Foundation of Hebei Province, China (Grant Nos 601047 and E2005000048).

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摘要： Annealing effect of the oxygen precipitation and the induced defects have been investigated on the fast neutron irradiated Czochralski silicon (CZ-Si) by infrared absorption spectrum and the optical microscopy. It is found that the fast neutron irradiation greatly accelerates the oxygen precipitation that leads to a sharp decrease of the interstitial oxygen with the annealing time. At room temperature (RT), the 1107cm-1 infrared absorption band of interstitial oxygen becomes weak and broadens to low energy side. At low temperature, the infrared absorption peaks appear at 1078cm-1, 1096cm-1, and 1182cm-1, related to different shapes of the oxygen precipitates. The bulk microdefects, including stacking faults, dislocations and dislocation loops, were observed by the optical microscopy. New or large stacking faults grow up when the silicon self-interstitial atoms are created and aggregate with oxygen precipitation.

关键词: oxygen precipitation, neutron irradiation, defects, CZ-Si

Abstract: Annealing effect of the oxygen precipitation and the induced defects have been investigated on the fast neutron irradiated Czochralski silicon (CZ-Si) by infrared absorption spectrum and the optical microscopy. It is found that the fast neutron irradiation greatly accelerates the oxygen precipitation that leads to a sharp decrease of the interstitial oxygen with the annealing time. At room temperature (RT), the 1107cm-1 infrared absorption band of interstitial oxygen becomes weak and broadens to low energy side. At low temperature, the infrared absorption peaks appear at 1078cm-1, 1096cm-1, and 1182cm-1, related to different shapes of the oxygen precipitates. The bulk microdefects, including stacking faults, dislocations and dislocation loops, were observed by the optical microscopy. New or large stacking faults grow up when the silicon self-interstitial atoms are created and aggregate with oxygen precipitation.

Key words: oxygen precipitation, neutron irradiation, defects, CZ-Si

中图分类号:  (Elemental semiconductors and insulators)

  • 78.30.Am
61.72.J- (Point defects and defect clusters) 61.72.Nn (Stacking faults and other planar or extended defects) 61.72.S- (Impurities in crystals) 61.72.Cc (Kinetics of defect formation and annealing) 81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)