中国物理B ›› 2005, Vol. 14 ›› Issue (10): 2141-2144.doi: 10.1088/1009-1963/14/10/037

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Photoluminescence study on Eu-implanted GaN

张春光, 卞留芳, 陈维德   

  1. State Key Laboratory for Surface Physics, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2005-01-27 修回日期:2005-06-18 出版日期:2005-10-20 发布日期:2005-10-20

Photoluminescence study on Eu-implanted GaN

Zhang Chun-Guang (张春光), Bian Liu-Fang (卞留芳), Chen Wei-De (陈维德)   

  1. State Key Laboratory for Surface Physics, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China
  • Received:2005-01-27 Revised:2005-06-18 Online:2005-10-20 Published:2005-10-20

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摘要： The photoluminescence (PL) properties of Eu-implanted GaN thin films are studied. The experimental results show that the PL intensity is seriously affected by ion implantation conditions. The PL efficiency increases exponentially with annealing temperature increasing up to a maximum temperature of 1050℃. Moreover, the PL intensity for the sample implanted along the channelling direction is nearly twice more than that observed from the sample implanted along the random direction. The thermal quenching of PL intensity from 10K to 300K for sample annealed at 1050℃ is only 42.7%.

Abstract: The photoluminescence (PL) properties of Eu-implanted GaN thin films are studied. The experimental results show that the PL intensity is seriously affected by ion implantation conditions. The PL efficiency increases exponentially with annealing temperature increasing up to a maximum temperature of 1050℃. Moreover, the PL intensity for the sample implanted along the channelling direction is nearly twice more than that observed from the sample implanted along the random direction. The thermal quenching of PL intensity from 10K to 300K for sample annealed at 1050℃ is only 42.7%.

Key words: photoluminescence, metalorganic chemical vapour deposition, implanting, gallium nitride

中图分类号:  (III-V semiconductors)

  • 78.55.Cr
78.66.Fd (III-V semiconductors) 68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.) 61.80.Jh (Ion radiation effects) 81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)