中国物理B ›› 2004, Vol. 13 ›› Issue (7): 1110-1113.doi: 10.1088/1009-1963/13/7/025

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Analysis of the effect of sidewall on the performance of 6H-SiC Schottky barrier source/drain NMOSFETs

汤晓燕, 张义门, 张玉明, 郜锦侠   

  1. Microelectronics Institute, Xidian University, Xi'an 710071, China
  • 收稿日期:2004-01-31 修回日期:2004-03-01 出版日期:2005-07-05 发布日期:2005-07-05
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 60276047) and Key Laboratory Foundation of China (Grant No 51432050101DZ01).

Analysis of the effect of sidewall on the performance of 6H-SiC Schottky barrier source/drain NMOSFETs

Tang Xiao-Yan (汤晓燕), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Gao Jin-Xia (郜锦侠)   

  1. Microelectronics Institute, Xidian University, Xi'an 710071, China
  • Received:2004-01-31 Revised:2004-03-01 Online:2005-07-05 Published:2005-07-05
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 60276047) and Key Laboratory Foundation of China (Grant No 51432050101DZ01).

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摘要： Between source/drain and gate of SiC Schottky barrier source/drain MOSFET (SiC SBSD-MOSFET), there must be a sidewall as isolation. The width of sidewall strongly affects on the device performance. In this paper the effect of sidewall on the performance of 6H-SiC SBSD-NMOSFET is simulated with the 2D simulator MEDICI. The simulated results show that a sidewall with width less than 0.1μm slightly affects the device performance. However, when the width of sidewall exceeds 0.1μm, the conduction does not occur until the drain voltage is high enough and saturation current sharply decreases. The effect of the sidewall on device performance can be reduced by decreasing the doping concentration in the epitaxial layer.

Abstract: Between source/drain and gate of SiC Schottky barrier source/drain MOSFET (SiC SBSD-MOSFET), there must be a sidewall as isolation. The width of sidewall strongly affects on the device performance. In this paper the effect of sidewall on the performance of 6H-SiC SBSD-NMOSFET is simulated with the 2D simulator MEDICI. The simulated results show that a sidewall with width less than 0.1μm slightly affects the device performance. However, when the width of sidewall exceeds 0.1μm, the conduction does not occur until the drain voltage is high enough and saturation current sharply decreases. The effect of the sidewall on device performance can be reduced by decreasing the doping concentration in the epitaxial layer.

Key words: 6H-SiC, Schottky contact, sidewall, MOSFET

中图分类号:  (Field effect devices)

  • 85.30.Tv
73.30.+y (Surface double layers, Schottky barriers, and work functions) 85.30.De (Semiconductor-device characterization, design, and modeling) 72.80.Jc (Other crystalline inorganic semiconductors) 73.40.Ns (Metal-nonmetal contacts)