中国物理B ›› 2004, Vol. 13 ›› Issue (7): 1114-1119.doi: 10.1088/1009-1963/13/7/026

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A novel type of ultra fast and ultra soft recovery SiGe/Si heterojunction power diode with an ideal ohmic contact

马丽1, 高勇2, 王彩琳2   

  1. (1)Department of Applied Physics, Xi'an University of Technology, Xi'an 710048, China; (2)Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China
  • 收稿日期:2004-01-14 修回日期:2004-03-01 出版日期:2004-07-05 发布日期:2005-07-05
  • 基金资助:
    Project supported by the Information Industry Experimental Research Programme of Information Industry Ministry of China (Grant No 01XK610012).

A novel type of ultra fast and ultra soft recovery SiGe/Si heterojunction power diode with an ideal ohmic contact

Ma Li (马丽)a, Gao Yong (高勇)b, Wang Cai-Lin (王彩琳)b   

  1. a Department of Applied Physics, Xi'an University of Technology, Xi'an 710048, China; b Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China
  • Received:2004-01-14 Revised:2004-03-01 Online:2004-07-05 Published:2005-07-05
  • Supported by:
    Project supported by the Information Industry Experimental Research Programme of Information Industry Ministry of China (Grant No 01XK610012).

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摘要： A novel type of p^+(SiGe)－n^-－n^+ heterojunction switching power diode with high-speed capability is presented to overcome the drawbacks of existing power diodes. The improvement is achieved by using a p^+－n^+ mosaic layer as a substitute for the n^+ region in the conventional p^+(SiGe)－n^-－n^+ diode to realize an `ideal ohmic' contact for electrons and holes simultaneously. Compared with conventional p^+(SiGe)－n^-－n^+ diodes, the ideal ohmic contact p^+(SiGe)－n^-－n^+ diodes have about one third of the reverse recovery time and a half of peak reverse recovery current. Furthermore, the softness factor increases nearly two times and the leakage current decreases 1－2 orders of magnitude. These improvements are achieved without resorting special process step to lower the carrier lifetime and thus the devices could be easily integrated into power ICs. The Ge percentage content of p^+(SiGe) layer is an important parameter for the optimal device design.

关键词: SiGe/Si heterojunction, power diode, ideal ohmic contact, ultra fast and ultra soft recovery

Abstract: A novel type of p$^+$(SiGe)－n$^-$－n$^+$ heterojunction switching power diode with high-speed capability is presented to overcome the drawbacks of existing power diodes. The improvement is achieved by using a p$^+$－n$^+$ mosaic layer as a substitute for the n$^+$ region in the conventional p$^+$(SiGe)－n$^-$－n$^+$ diode to realize an `ideal ohmic' contact for electrons and holes simultaneously. Compared with conventional p$^+$(SiGe)－n$^-$－n$^+$ diodes, the ideal ohmic contact p$^+$(SiGe)－n$^-$－n$^+$ diodes have about one third of the reverse recovery time and a half of peak reverse recovery current. Furthermore, the softness factor increases nearly two times and the leakage current decreases 1－2 orders of magnitude. These improvements are achieved without resorting special process step to lower the carrier lifetime and thus the devices could be easily integrated into power ICs. The Ge percentage content of p$^+$(SiGe) layer is an important parameter for the optimal device design.

Key words: SiGe/Si heterojunction, power diode, ideal ohmic contact, ultra fast and ultra soft recovery

中图分类号:  (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Lq
85.30.Kk (Junction diodes) 73.40.Ns (Metal-nonmetal contacts) 85.30.De (Semiconductor-device characterization, design, and modeling) 72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping) 72.80.Cw (Elemental semiconductors)