中国物理B ›› 2003, Vol. 12 ›› Issue (3): 325-327.doi: 10.1088/1009-1963/12/3/314

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Annealing characteristics of ultra-thin high-K HfO2 gate dielectrics

韩德栋, 康晋锋, 林长海, 韩汝琦   

  1. Institute of Microelectronics, Peking University, Beijing 100871, China
  • 收稿日期:2002-01-24 修回日期:2002-11-21 出版日期:2003-03-16 发布日期:2005-03-16
  • 基金资助:
    Project supported by the State Key Development Program for Basic Research of China (Grant No G20000365).

Annealing characteristics of ultra-thin high-K HfO2 gate dielectrics

Han De-Dong (韩德栋), Kang Jin-Feng (康晋锋), Lin Chang-Hai (林长海), Han Ru-Qi (韩汝琦)   

  1. Institute of Microelectronics, Peking University, Beijing 100871, China
  • Received:2002-01-24 Revised:2002-11-21 Online:2003-03-16 Published:2005-03-16
  • Supported by:
    Project supported by the State Key Development Program for Basic Research of China (Grant No G20000365).

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摘要： Ultra-thin HfO_2 gate-dielectric films were fabricated by ion-beam sputtering a sintered HfO_2 target and subsequently annealed at different temperatures and atmospheres. We have studied the capacitance-voltage, current-voltage, and breakdown characteristics of the gate dielectrics. The results show that electrical characteristics of HfO_2 gate dielectric are related to the annealing temperature. With increase annealing temperature, the largest value of capacitance decreases, the equivalent oxide thickness increases, the leakage current reduces, and the breakdown voltage decreases.

Abstract: Ultra-thin HfO2 gate-dielectric films were fabricated by ion-beam sputtering a sintered HfO2 target and subsequently annealed at different temperatures and atmospheres. We have studied the capacitance-voltage, current-voltage, and breakdown characteristics of the gate dielectrics. The results show that electrical characteristics of HfO2 gate dielectric are related to the annealing temperature. With increase annealing temperature, the largest value of capacitance decreases, the equivalent oxide thickness increases, the leakage current reduces, and the breakdown voltage decreases.

Key words: annealing characteristics, high-K, HfO2 gate dielectrics

中图分类号: 

  • 77.55.+f
77.84.Bw (Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.) 81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization) 81.15.Cd (Deposition by sputtering) 73.61.Ng (Insulators)