中国物理B ›› 2003, Vol. 12 ›› Issue (3): 322-324.doi: 10.1088/1009-1963/12/3/313

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Fabrication and characteristics of lateral Ti/4H-SiC Schottky barrier diodes

张志勇1, 闫军锋1, 杨林安2, 张义门2, 张玉明2, 王守国3   

  1. (1)Department of Electronics, Northwest University, Xi'an 710069, China; (2)Institute of Microelectronics, Xidian University, Xi'an 710071, China; (3)Institute of Microelectronics, Xidian University, Xi'an 710071, China; Department of Electronics, Northwest University, Xi'an 710069, China
  • 收稿日期:2002-06-13 修回日期:2002-11-13 出版日期:2003-03-16 发布日期:2005-03-16
  • 基金资助:
    Project supported by the National Defense Pre-Research Foundation of China (Grant No 8.1.7.3).

Fabrication and characteristics of lateral Ti/4H-SiC Schottky barrier diodes

Wang Shou-Guo (王守国)ab, Yang Lin-An (杨林安)a, Zhang Yi-Men (张义门)a, Zhang Yu-Ming (张玉明)a, Zhang Zhi-Yong (张志勇)b, Yan Jun-Feng (闫军锋)b   

  1. a Institute of Microelectronics, Xidian University, Xi'an 710071, China; b Department of Electronics, Northwest University, Xi'an 710069, China
  • Received:2002-06-13 Revised:2002-11-13 Online:2003-03-16 Published:2005-03-16
  • Supported by:
    Project supported by the National Defense Pre-Research Foundation of China (Grant No 8.1.7.3).

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摘要： This paper describes the fabrication and characteristics of the lateral Ti/4H-SiC Schottky barrier diodes (SBDs). SBDs are fabricated by nitrogen ion implantation into p-type 4H-SiC epitaxial layer. The implant depth profile is simulated using the Monte Carlo simulator TRIM. Measurements of the reverse I－V characteristics demonstrate a low reverse current, that is good enough for many SiC-based devices such as SiC metal-semiconductor field-effect transistors, and SiC static induction transistors. The parameters of the diodes are extracted from the forward I－V characteristics. The barrier height φ_b of Ti/4H-SiC is 0.95 eV.

Abstract: This paper describes the fabrication and characteristics of the lateral Ti/4H-SiC Schottky barrier diodes (SBDs). SBDs are fabricated by nitrogen ion implantation into p-type 4H-SiC epitaxial layer. The implant depth profile is simulated using the Monte Carlo simulator TRIM. Measurements of the reverse I－V characteristics demonstrate a low reverse current, that is good enough for many SiC-based devices such as SiC metal-semiconductor field-effect transistors, and SiC static induction transistors. The parameters of the diodes are extracted from the forward I－V characteristics. The barrier height $\phi_{\rm b}$ of Ti/4H-SiC is 0.95 eV.

Key words: silicon carbide, ion implantation, Schottky barrier diodes, barrier height

中图分类号:  (Specific materials: fabrication, treatment, testing, and analysis)

  • 81.05.-t
73.30.+y (Surface double layers, Schottky barriers, and work functions) 73.40.Ns (Metal-nonmetal contacts)