中国物理B ›› 1996, Vol. 5 ›› Issue (12): 923-929.doi: 10.1088/1004-423X/5/12/005

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    

ANALYTICAL MODELING OF THE RECOMBINATION CURRENT IN THE BASE-EMITTER SPACE CHARGE REGION OF HETEROJUNCTION BIPOLAR TRANSISTORS

严北平, 罗晋生   

  1. Deportment of Microelectronic Engineering, Xidian University, Xi'an 710049, China
  • 收稿日期:1996-04-08 出版日期:1996-12-20 发布日期:1996-12-20

ANALYTICAL MODELING OF THE RECOMBINATION CURRENT IN THE BASE-EMITTER SPACE CHARGE REGION OF HETEROJUNCTION BIPOLAR TRANSISTORS

YAN BEI-PING (严北平), LUO JIN-SHENG (罗晋生)   

  1. Deportment of Microelectronic Engineering, Xidian University, Xi'an 710049, China
  • Received:1996-04-08 Online:1996-12-20 Published:1996-12-20

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摘要： An analytical modeling of the recombination current in the base-emitter space charge region of heterojunction bipolar transistors is derived. The recombination rates as functions of distance in the space charge region are calculated for different hase doping concentrations. The relations between the space charge recombination current and the applied voltage have been determined.

Abstract: An analytical modeling of the recombination current in the base-emitter space charge region of heterojunction bipolar transistors is derived. The recombination rates as functions of distance in the space charge region are calculated for different hase doping concentrations. The relations between the space charge recombination current and the applied voltage have been determined.

中图分类号:  (Bipolar transistors)

  • 85.30.Pq
85.30.De (Semiconductor-device characterization, design, and modeling) 73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping) 77.22.Jp (Dielectric breakdown and space-charge effects)