中国物理B ›› 1996, Vol. 5 ›› Issue (12): 923-929.doi: 10.1088/1004-423X/5/12/005
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇
严北平, 罗晋生
YAN BEI-PING (严北平), LUO JIN-SHENG (罗晋生)
摘要: An analytical modeling of the recombination current in the base-emitter space charge region of heterojunction bipolar transistors is derived. The recombination rates as functions of distance in the space charge region are calculated for different hase doping concentrations. The relations between the space charge recombination current and the applied voltage have been determined.
中图分类号: (Bipolar transistors)