中国物理B ›› 1998, Vol. 7 ›› Issue (7): 504-509.doi: 10.1088/1004-423X/7/7/004

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

EFFECT OF TEMPERATURE ON ELECTRICAL RESISTIVITY OF A HYDROGENATED LaNi5 THIN FILM

朱开贵, 石建中, 张立德   

  1. Institute of Solid State Physics, Academia Sinica, Heifei 230031, China
  • 收稿日期:1997-10-27 修回日期:1998-02-23 出版日期:1998-07-20 发布日期:1998-07-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China.

EFFECT OF TEMPERATURE ON ELECTRICAL RESISTIVITY OF A HYDROGENATED LaNi5 THIN FILM

Zhu Kai-gui (朱开贵), Shi Jian-zhong (石建中), Zhang Li-de (张立德)   

  1. Institute of Solid State Physics, Academia Sinica, Heifei 230031, China
  • Received:1997-10-27 Revised:1998-02-23 Online:1998-07-20 Published:1998-07-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China.

摘要: The electrical resistivity of a hydrogenated LaNi5 thin film has been investigated as a function of temperature in vacuum and in hydrogen. While the film was heated in vacuum for the first time, the change in resistivity exhibited different characteristics during different ranges of temperatures due to the competition of two effects owing to the lattice scattering of conductive electrons and the number of them. The resistivity had a sharp drop near 600 K, which originates from the formation of high conducting lanthanum hydride and nickel due to a reaction between the dissolved hydrogen and LaNi5. The change in resistivity was not repeatable during the successive heating and cooling processes. When the film was heated under a hydrogen atmosphere, a drop in resistivity occurred near 700 K due to the reaction between LaNi5 and the hydrogen atmosphere. The film showed a linear temperature dependence of receptivity with completeness of the reaction. It was found that the reaction was irreversible. The film lost the ability of hydrogen absorption after the reaction, and it had a phase change from LaNi5 to LaH and Ni. This result was supported by X-ray diffraction patterns.

Abstract: The electrical resistivity of a hydrogenated LaNi5 thin film has been investigated as a function of temperature in vacuum and in hydrogen. While the film was heated in vacuum for the first time, the change in resistivity exhibited different characteristics during different ranges of temperatures due to the competition of two effects owing to the lattice scattering of conductive electrons and the number of them. The resistivity had a sharp drop near 600 K, which originates from the formation of high conducting lanthanum hydride and nickel due to a reaction between the dissolved hydrogen and LaNi5. The change in resistivity was not repeatable during the successive heating and cooling processes. When the film was heated under a hydrogen atmosphere, a drop in resistivity occurred near 700 K due to the reaction between LaNi5 and the hydrogen atmosphere. The film showed a linear temperature dependence of receptivity with completeness of the reaction. It was found that the reaction was irreversible. The film lost the ability of hydrogen absorption after the reaction, and it had a phase change from LaNi5 to LaH and Ni. This result was supported by X-ray diffraction patterns.

中图分类号:  (Insulators)

  • 73.61.Ng
72.20.Fr (Low-field transport and mobility; piezoresistance)