中国物理B ›› 2008, Vol. 17 ›› Issue (7): 2717-2720.doi: 10.1088/1674-1056/17/7/060

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Spontaneous magnetization and resistivity jumps in bilayered manganite (La0.8Eu0.2)4/3Sr5/3Mn2O7 single crystals

鲁毅1, 浩斯巴雅尔1, 邢茹1, 赵建军2, 杨仁福3, 李庆安3, 孙阳3, 成昭华3   

  1. (1)Department of Physics, Baotou Normal University, Baotou 014030, China; (2)Department of Physics, Baotou Normal University, Baotou 014030, China;State Key Laboratory of Magnetism and Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; (3)State Key Laboratory of Magnetism and Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 收稿日期:2007-09-07 修回日期:2008-01-14 出版日期:2008-07-09 发布日期:2008-07-09
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 50672126) and the Inner Mongolia Natural Science Foundation, China (Grant No 200607010102).

Spontaneous magnetization and resistivity jumps in bilayered manganite (La0.8Eu0.2)4/3Sr5/3Mn2O7 single crystals

Zhao Jian-Jun(赵建军)a)b)†, Lu Yi(鲁毅)a), Haosibayar(浩斯巴雅尔)a),Xing Ru(邢茹)a), Yang Ren-Fu(杨仁福)b), Li Qing-An(李庆安)b), Sun Young(孙阳)b), and Cheng Zhao-Hua(成昭华)b)   

  1. a Department of Physics, Baotou Normal University, Baotou 014030, China; b State Key Laboratory of Magnetism and Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • Received:2007-09-07 Revised:2008-01-14 Online:2008-07-09 Published:2008-07-09
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 50672126) and the Inner Mongolia Natural Science Foundation, China (Grant No 200607010102).

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摘要： Owing to the inhomogeneous state resulting from the doping of a small number of Eu ions into La$_{4 / 3}$Sr$_{5 / 3}$Mn$_{2}$O$_{7}$, from the resulting single crystal (La$_{0.8}$Eu$_{0.2})_{4 / 3}$Sr$_{5 / 3}$Mn$_{2}$O$_{7}$ we have observed the magnetization jump, the resistivity jump, as well as the relaxation phenomena. For (La$_{0.8}$Eu$_{0.2})_{4 / 3}$Sr$_{5 / 3}$Mn$_{2}$O$_{7}$, it has a very delicate ground state due to the interplays among spin, charge, orbital, lattice degrees of freedom. Consequently, the magnetization state is sensitive to temperature, magnetic field, as well as time. Meanwhile, the evolution of the magnetization with time shows a spontaneous jump when both the temperature and the magnetic field are constant. Similar step-like behaviours are also observed in resistivity. All these results suggest that Eu doping can greatly modulate the physical properties of La$_{4 / 3}$Sr$_{5 / 3}$Mn$_{2}$O$_{7}$ and cause such interesting behaviours.

关键词: manganite, magnetization jump, resistivity jump, relaxation

Abstract: Owing to the inhomogeneous state resulting from the doping of a small number of Eu ions into La$_{4 / 3}$Sr$_{5 / 3}$Mn$_{2}$O$_{7}$, from the resulting single crystal (La$_{0.8}$Eu$_{0.2})_{4 / 3}$Sr$_{5 / 3}$Mn$_{2}$O$_{7}$ we have observed the magnetization jump, the resistivity jump, as well as the relaxation phenomena. For (La$_{0.8}$Eu$_{0.2})_{4 / 3}$Sr$_{5 / 3}$Mn$_{2}$O$_{7}$, it has a very delicate ground state due to the interplays among spin, charge, orbital, lattice degrees of freedom. Consequently, the magnetization state is sensitive to temperature, magnetic field, as well as time. Meanwhile, the evolution of the magnetization with time shows a spontaneous jump when both the temperature and the magnetic field are constant. Similar step-like behaviours are also observed in resistivity. All these results suggest that Eu doping can greatly modulate the physical properties of La$_{4 / 3}$Sr$_{5 / 3}$Mn$_{2}$O$_{7}$ and cause such interesting behaviours.

Key words: manganite, magnetization jump, resistivity jump, relaxation

中图分类号:  (Magnetic properties of interfaces (multilayers, superlattices, heterostructures))

  • 75.70.Cn
61.72.up (Other materials) 73.61.Ng (Insulators) 75.30.Cr (Saturation moments and magnetic susceptibilities) 75.47.Gk (Colossal magnetoresistance) 75.47.Lx (Magnetic oxides)