中国物理B ›› 2008, Vol. 17 ›› Issue (4): 1467-1471.doi: 10.1088/1674-1056/17/4/053

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Field emission characteristics of nano-sheet carbon films deposited by quartz-tube microwave plasma chemical vapour deposition

顾广瑞1, 金哲1, Ito Toshimichi2   

  1. (1)Department of Physics, College of Science, Yanbian University, Yanji 133002, China; (2)Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Osaka 565-0871, Japan
  • 收稿日期:2007-07-08 修回日期:2007-10-22 出版日期:2008-04-20 发布日期:2008-04-20

Field emission characteristics of nano-sheet carbon films deposited by quartz-tube microwave plasma chemical vapour deposition

Gu Guang-Rui(顾广瑞)a)†, Jin Zhe(金哲)a), and Ito Toshimichib)   

  1. a Department of Physics, College of Science, Yanbian University, Yanji 133002, China; b Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Osaka 565-0871, Japan
  • Received:2007-07-08 Revised:2007-10-22 Online:2008-04-20 Published:2008-04-20

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摘要： Nano-sheet carbon films are prepared on Si wafers by means of quartz-tube microwave plasma chemical vapour deposition (MPCVD) in a gas mixture of hydrogen and methane. The structure of the fabricated films is investigated by using field emission scanning electron microscope (FESEM) and Raman spectroscopy. These nano-carbon films are possessed of good field emission (FE) characteristics with a low threshold field of 2.6\,V/$\mu $m and a high current density of 12.6\,mA/cm$^{2}$ at an electric field of 9\,V/$\mu $m. As the FE currents tend to be saturated in a high $E$ region, no simple Fowler--Nordheim (F--N) model is applicable. A modified F--N model considering statistic effects of FE tip structures and a space-charge-limited-current (SCLC) effect is applied successfully to explaining the FE data observed at low and high electric fields, respectively.

关键词: field emission, carbon films, nano-sheet, microwave plasma chemical vapour deposition

Abstract: Nano-sheet carbon films are prepared on Si wafers by means of quartz-tube microwave plasma chemical vapour deposition (MPCVD) in a gas mixture of hydrogen and methane. The structure of the fabricated films is investigated by using field emission scanning electron microscope (FESEM) and Raman spectroscopy. These nano-carbon films are possessed of good field emission (FE) characteristics with a low threshold field of 2.6 V/$\mu $m and a high current density of 12.6 mA/cm$^{2}$ at an electric field of 9 V/$\mu $m. As the FE currents tend to be saturated in a high $E$ region, no simple Fowler--Nordheim (F--N) model is applicable. A modified F--N model considering statistic effects of FE tip structures and a space-charge-limited-current (SCLC) effect is applied successfully to explaining the FE data observed at low and high electric fields, respectively.

Key words: field emission, carbon films, nano-sheet, microwave plasma chemical vapour deposition

中图分类号:  (Insulators)

  • 73.61.Ng
73.63.Bd (Nanocrystalline materials) 78.30.Hv (Other nonmetallic inorganics) 79.70.+q (Field emission, ionization, evaporation, and desorption) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))