Reversible alternation between bipolar and unipolar resistive switching in La-SrTiO3 thin films

doi:10.1088/1674-1056/22/11/117314

中国物理B ›› 2013, Vol. 22 ›› Issue (11): 117314-117314.doi: 10.1088/1674-1056/22/11/117314

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Reversible alternation between bipolar and unipolar resistive switching in La-SrTiO₃ thin films

许定林^a, 熊颖^b, 唐明华^a, 曾柏文^a, 肖永光^a, 王子平^a

a Key Laboratory for Low Dimensional Materials and Application Technology of Ministry of Education, Xiangtan University, Xiangtan 411105, China;
b School of Mathematics and Computational Science, Xiangtan University, Xiangtan 411105, China

收稿日期:2013-03-04 修回日期:2013-04-09 出版日期:2013-09-28 发布日期:2013-09-28
基金资助:
Project supported by the Key Projects of the National Natural Science Foundation of China (Grant No. 11032010), the National Natural Science Foundation of China (Grant Nos. 51072171, 61274107, 61176093, and 11275163), the Program for Changjiang Scholars and Innovative Research Team in University, China (Grant No. IRT1080), the National Basic Rearch Program of China (Grant No. 2012CB326404), the Key Projects of Scientific Research Fund of Hunan Provincial Education Department, China (Grant No. 12A129), the Doctoral Program of Higher Education of China (Grant No. 20104301110001), and the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province, China.

Reversible alternation between bipolar and unipolar resistive switching in La-SrTiO₃ thin films

Xu Ding-Lin (许定林)^a, Xiong Ying (熊颖)^b, Tang Ming-Hua (唐明华)^a, Zeng Bai-Wen (曾柏文)^a, Xiao Yong-Guang (肖永光)^a, Wang Zi-Ping (王子平)^a

a Key Laboratory for Low Dimensional Materials and Application Technology of Ministry of Education, Xiangtan University, Xiangtan 411105, China;
b School of Mathematics and Computational Science, Xiangtan University, Xiangtan 411105, China

Received:2013-03-04 Revised:2013-04-09 Online:2013-09-28 Published:2013-09-28
Contact: Tang Ming-Hua E-mail:mhtang@xtu.edu.cn
Supported by:
Project supported by the Key Projects of the National Natural Science Foundation of China (Grant No. 11032010), the National Natural Science Foundation of China (Grant Nos. 51072171, 61274107, 61176093, and 11275163), the Program for Changjiang Scholars and Innovative Research Team in University, China (Grant No. IRT1080), the National Basic Rearch Program of China (Grant No. 2012CB326404), the Key Projects of Scientific Research Fund of Hunan Provincial Education Department, China (Grant No. 12A129), the Doctoral Program of Higher Education of China (Grant No. 20104301110001), and the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province, China.

摘要/Abstract

摘要： The alternation from bipolar to unipolar resistive switching is observed in perovskite La_0.01Sr_0.99TiO₃ thin films. These two switching modes can be activated separately depending on the compliance current (I_comp) during the electroforming process: with a higher I_comp (5 mA) the unipolar resistance switching behavior is measured, while the bipolar resistance switching behavior is observed with a lower I_comp (1 mA). On the basis of I–V characteristics, the switching mechanisms for the URS and BRS modes are considered as being a change in the Schottky-like barrier height and/or width at the Pt/La-SrTiO₃ interface and the formation and disruption of conduction filaments, respectively.

关键词: unipolar and bipolar resistive switching, La-doped SrTiO₃ thin film

Abstract: The alternation from bipolar to unipolar resistive switching is observed in perovskite La_0.01Sr_0.99TiO₃ thin films. These two switching modes can be activated separately depending on the compliance current (I_comp) during the electroforming process: with a higher I_comp (5 mA) the unipolar resistance switching behavior is measured, while the bipolar resistance switching behavior is observed with a lower I_comp (1 mA). On the basis of I–V characteristics, the switching mechanisms for the URS and BRS modes are considered as being a change in the Schottky-like barrier height and/or width at the Pt/La-SrTiO₃ interface and the formation and disruption of conduction filaments, respectively.

Key words: unipolar and bipolar resistive switching, La-doped SrTiO₃ thin film

中图分类号: (Insulators)

73.61.Ng

72.80.Ga (Transition-metal compounds)

许定林, 熊颖, 唐明华, 曾柏文, 肖永光, 王子平. Reversible alternation between bipolar and unipolar resistive switching in La-SrTiO₃ thin films[J]. 中国物理B, 2013, 22(11): 117314-117314.

Xu Ding-Lin (许定林), Xiong Ying (熊颖), Tang Ming-Hua (唐明华), Zeng Bai-Wen (曾柏文), Xiao Yong-Guang (肖永光), Wang Zi-Ping (王子平). Reversible alternation between bipolar and unipolar resistive switching in La-SrTiO₃ thin films[J]. Chin. Phys. B, 2013, 22(11): 117314-117314.

参考文献 21

[1]	Meijer G I 2008 Science 319 1625
[2]	Waser R and Aono M 2007 Nature Mater. 6 833
[3]	Yang Y C, Pan F, Liu Q, Liu M and Zeng F 2009 Nano Lett. 9 1636
[4]	Liu Q, Long S B, Wang W, Zuo Q Y, Zhang S, Chen J N and Liu M 2009 IEEE Electron Device Lett. 30 1335
[5]	Lv H B, Zhou P, Fu X F, Yin M, Song Y L, Tang L, Tang T A and Lin Y Y 2008 Chin. Phys. Lett. 25 1087
[6]	Lee S, Kim H, Park J and Yong K 2010 J. Appl. Phys. 108 076101
[7]	Zhao J W, Liu F J, Huang H Q, Hu Z F and Zhang X Q 2012 Chin. Phys. B 21 065201
[8]	Jeong D S, Schroeder H and Waser R 2007 Electrochem. Solid-State Lett. 10 G51
[9]	Liu M, Abid Z, Wang W, He X L, Liu Q and Guan W H 2009 Appl. Phys. Lett. 94 233106
[10]	Liu Y C, Chuang C C, Chen J S, Wang A, Jang W Y, Young J C, Chiu K Y and Tseng T Y 2006 Thin Solid Films 494 287
[11]	Li M, Zhuge F, Zhu X J, Yin K B, Wang J Z, Liu Y W, He C L, Chen B and Li R W 2010 Nanotechnology 21 425202
[12]	Szot K, Speier W G, Bihlmayer G and Waser R 2006 Nature Mater. 5 312
[13]	Wang Y, Liu Q, Lv H B, Long S B, Zhang S, Li Y T, Lian W T, Ynag J H and Liu M 2011 Chin. Phys. Lett. 28 077201
[14]	Shen W, Dittmann R and Waser R 2010 J. Appl. Phys. 107 094506
[15]	Lee C, Kim I, Shin H, Kim S and Cho J 2009 Langmuir. 25 11276
[16]	Rohde C, Choi B J, Jeong D S, Choi S, Zhao J S and Hwang C S 2005 Appl. Phys. Lett. 86 262907
[17]	Lee S B, Kim A, Lee J S, Chang S H, Yoo H K, Noh T W, Kahng B, Lee M J, Kim C J and Kang B S 2010 Appl. Phys. Lett. 97 093505
[18]	Sun X W, Li J Q, Zhang X A, Ding L H and Zhang W F 2011 J. Phys. D: Appl. Phys. 44 125404
[19]	Lampert M A 1956 Phys. Rev. 103 1648
[20]	Kim H, Park C, Lee S and Kim D W 2009 J. Phys. D: Appl. Phys. 42 055306
[21]	Fujii T, Kawasaki M, Sawa A, Akoh H, Kawazoe Y and Tokura Y 2007 Phys. Rev. B 75 165101

Reversible alternation between bipolar and unipolar resistive switching in La-SrTiO₃ thin films

Reversible alternation between bipolar and unipolar resistive switching in La-SrTiO₃ thin films

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